Metal and dielectric compounded high-temperature-resistant solar spectrum selective absorption structure

A dielectric composite, solar spectrum technology, applied in the field of high temperature resistant solar spectrum selective absorption structure, can solve the problems of narrow absorption spectrum range, complex structure, oxidation failure, etc., achieve design diversification, prevent diffusion and oxidation, good high temperature resistance performance effect

Active Publication Date: 2021-06-01
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing solar energy absorbing structures generally have some defects, such as: the absorption spectrum is narrow and only limited to the visible light region; the traditional gold, silver and other noble metals and dielectric composite nanostructures are prone to diffusion and oxidation failure in high temperature environments; structure is too complex

Method used

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  • Metal and dielectric compounded high-temperature-resistant solar spectrum selective absorption structure
  • Metal and dielectric compounded high-temperature-resistant solar spectrum selective absorption structure
  • Metal and dielectric compounded high-temperature-resistant solar spectrum selective absorption structure

Examples

Experimental program
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Effect test

Embodiment 1

[0037] The material of the underlying metal film 1 is tungsten, with a thickness of 240nm; the metal nano-square star prisms 3 with cylindrical holes in the center are arranged in a square (i.e. a special parallelogram) array, and two adjacent metal nano-square star prisms The distance of the central axis of the prism 3 corresponds to the side length of the square, and its value is 476nm; the material of the metal nano-square star-shaped prism 3 is tungsten, and the thickness of each metal nano-square star-shaped prism 3 is 170nm. A four-pointed star with a circular hole, wherein the diameter of the circumscribed circle of the four-pointed star is 280nm, the diameter of the central circular hole is 60nm, and the degree of each angle is 46.4°; the dielectric filler 4, the first dielectric film 2, the second dielectric film 5, the second The materials of the three dielectric thin films 6 are all made of hafnium dioxide, and their thicknesses are 170nm, 40nm, 38.6nm and 65nm respe...

Embodiment 2

[0051] The material of the underlying metal film 1 is tungsten, and the thickness is 230nm; the metal nano-square star-shaped prism 3 with a cylindrical hole in the center is arranged in a regular hexagonal array, and the minimum distance between the central axes of two adjacent metal nano-square star-shaped prisms 3 Corresponding to the side length of a regular hexagon, its value is 550nm; the material of the metal nano-square star-shaped prism 3 is tungsten, and the thickness of each metal nano-square star-shaped prism 3 is 180nm, and its cross section is a four-pointed star with a round hole in the center. , wherein the diameter of the circumscribed circle of the four-pointed star is 300nm, the diameter of the central circular hole is 65nm, and the degree of each angle is 48°; the dielectric filler 4, the first dielectric film 2, the second dielectric film 5, and the third dielectric film 6 All materials use HfO 2 , and their thicknesses are 180nm, 50nm, 40nm, and 65nm, res...

Embodiment 3

[0053] The material of the underlying metal film 1 is chromium, and the thickness is 200nm; the metal nano-square star prism 3 with a cylindrical hole in the center is arranged in a rhombus (a special parallelogram) array, and two adjacent metal nano-square star prisms 3 The minimum distance between the central axes of the rhombus corresponds to the side length of the rhombus, and its value is 530nm; the two smaller angles of the rhombus are both 80°, and the two larger angles are both 100°. The metal nano-square star-shaped prism 3 is made of chromium, and the thickness of each metal nano-square star-shaped prism 3 is 185nm. The diameter of the hole is 50nm, and the degree of each angle is 45°; the materials of the dielectric filler 4, the first dielectric film 2, the second dielectric film 5, and the third dielectric film 6 all use SiO 2 , and their thicknesses are 185nm, 45nm, 42nm, and 62nm, respectively.

[0054] In the invention, the high melting point dielectric and th...

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Abstract

The invention discloses a metal and dielectric compounded high-temperature-resistant solar spectrum selective absorption structure, and aims to achieve high absorptivity in a wide spectrum from visible light to near-infrared light and realize efficient absorption of solar energy under a high-temperature condition. The structure comprises a bottom metal film, a first dielectric medium film is formed on the bottom layer metal film, an array formed by a plurality of metal nanometer quadrangular star-shaped prisms is formed on the first dielectric medium film, a cylindrical hole is formed in the center of each metal nanometer quadrangular star-shaped prism, the cylindrical holes are filled with dielectric medium filler, a second dielectric film is formed in the periphery of each metal nanometer quadrangular star-shaped prism, a third dielectric film is formed on the metal nanometer quadrangular star-shaped prisms, the dielectric filler and the second dielectric films, and the second dielectric films and the third dielectric films are in quadrangular star shapes.

Description

technical field [0001] The invention relates to the technical field of solar energy utilization, in particular to a high temperature resistant solar spectrum selective absorption structure composed of metal and dielectric. Background technique [0002] Solar energy is a clean, non-polluting renewable energy source, and the use of solar energy can help solve environmental pollution and energy shortage problems. In order to utilize solar energy more efficiently, technologies such as photovoltaic power generation, photothermal power generation, and thermal photovoltaic power generation have been proposed. In the above technologies, a simple and durable solar selective absorption structure is required to capture sunlight; at the same time, the selective absorption structure in photothermal power generation and thermal photovoltaic power generation also needs to have the ability to withstand high temperatures for a long time. Since Wood (Philos.Mag.,1902,4(21):396-402.) first di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/00H01L31/054F24S70/225
CPCG02B5/003H01L31/054F24S70/225Y02E10/40Y02E10/52
Inventor 邱羽张鹏飞李庆
Owner CENT SOUTH UNIV
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