A floating gate control type near-infrared band bidirectional memory photoelectric memory and preparation method thereof
A two-way memory, near-infrared light technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of difficult to realize the positive and negative response transition of near-infrared band two-way memory storage optical erasing
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Embodiment 1
[0030] like figure 1 As shown, a floating gate control type near-infrared band bidirectional memory photoelectric memory is provided. The photoelectric memory includes a substrate layer 1, a floating gate layer 2, a dielectric layer 3, a conductive channel layer 4 and a metal electrode arranged in sequence from bottom to top, and the material of the floating gate layer 2 is fullerene, which is used to store current The conductive channel layer 4 absorbs near-infrared light and provides a conductive channel; the dielectric layer 3 is a large band gap insulating material, and a potential barrier is formed between the dielectric layer 3 and the floating gate layer 2, so A potential barrier is formed between the dielectric layer 3 and the conductive channel layer 4 .
[0031] The working principle of the present invention: the material of the floating gate layer 2 is fullerene, which can effectively store electrons or holes injected from the conductive channel layer to the floati...
Embodiment 2
[0039] The present invention also provides a method for preparing a floating gate control type near-infrared band bidirectional memory photoelectric memory, the method comprising the following contents:
[0040] S1, prepare the substrate layer 1, clean the substrate layer 1 and dry it;
[0041] S2, on the substrate layer 1 after cleaning and drying, a layer of fullerene film is evaporated as the floating gate layer 2;
[0042] S3, preparing a layer of insulating material with a large band gap on the floating gate layer 2 as the dielectric layer 3;
[0043] S4. A conductive channel layer 4 is prepared on the dielectric layer 3, and a metal electrode is evaporated on the conductive channel layer 4 to complete the device preparation.
[0044] Further, an oxygen-silicon film is selected for the substrate layer 1, and cleaning the substrate layer 1 in S1 includes: sequentially using a detergent, acetone, ethanol, and deionized water to ultrasonically clean the oxygen-silicon film....
Embodiment 3
[0048] On the basis of Example 1, when the gate voltage and the positive and negative values of the injection gate voltage are changed, different photoresponse sizes will be produced.
[0049] like Figure 5 As shown, different injected gate voltages cause different photoresponses. When the absolute magnitude of the gate voltage increases, the magnitude of the response will also increase. This is because the larger the gate voltage, the more carriers are injected, and the resulting current changes are also reduced. When the gate voltage is changed, the direction of the photoresponse also changes, which is due to the change of the electrical properties of the injected carriers, resulting in an opposite photoresponse.
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