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High-temperature oxidized dichloroethylene cleaning process for wafer processing

A technology for oxidizing ethylene dichloride and ethylene dichloride, which is applied in the directions of cleaning hollow objects, cleaning methods and utensils, chemical instruments and methods, etc. Density, reducing corrosion pits, and improving yield

Inactive Publication Date: 2021-06-04
联物科技实业无锡有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] When the diffusion furnace tube is oxidized at high temperature, the temperature will reach 1200-1325 degrees Celsius. The current temperature range of dichloroethylene is generally below 1200 degrees Celsius. When the temperature is above 1200 degrees Celsius, especially above 1300 degrees Celsius, the gas pipeline and instantaneous When it is turned on, the vapor pressure of dichloroethylene becomes higher, causing the gas to be partially liquefied and decomposed into by-products containing acidic components, causing damage to the surface of the silicon wafer and forming corrosion pits

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Embodiment 1: The diffusion furnace tube is heated to 800 degrees Celsius, from 750 degrees Celsius to 800 degrees Celsius, and the heating rate is 5 degrees Celsius / minute;

[0018] Stabilize for 1 minute;

[0019] Then open oxygen and nitrogen, the gas ratio of feeding is: oxygen: nitrogen = 1:3, the opening rate is 5SLPM, the flow rate is 5SLPM, and it is stable for 1 minute; then close the nitrogen, and it is stable for 1 minute; then open dichloroethylene, the flow rate is 300SCCM, the opening rate is 100SCCM, stable for 1 minute;

[0020] Then heat up to 950 degrees Celsius, from 800 degrees Celsius to 950 degrees Celsius, heating rate=5 degrees Celsius / minute, and stabilize for 10 minutes;

[0021] Then turn off the dichlorethylene and stabilize for 1 minute;

[0022] Finally, the temperature is raised to 1325 degrees Celsius.

Embodiment 2

[0023] Embodiment 2: The diffusion furnace tube is heated to 800 degrees Celsius, from 750 degrees Celsius to 800 degrees Celsius, and the heating rate is 7 degrees Celsius / minute;

[0024] Stable for 3 minutes;

[0025] Then open oxygen and nitrogen, and the gas ratio of the feed is: oxygen: nitrogen = 1:3, the opening rate is 10SLPM, the flow rate is 5SLPM, and it is stable for 5 minutes; then close the nitrogen, and it is stable for 5 minutes; then open the dichloroethylene, and the flow rate is 1000SCCM, the opening rate is 300SCCM, stable for 5 minutes;

[0026] Then heat up to 950 degrees Celsius, from 800 degrees Celsius to 950 degrees Celsius, heating rate=10 degrees Celsius / minute, and stabilize for 30 minutes;

[0027] Then turn off the dichloroethylene and stabilize for 5 minutes;

[0028] Finally, the temperature is raised to 1200 degrees Celsius.

Embodiment 3

[0029] Embodiment three: the diffusion furnace tube is heated to 800 degrees Celsius, from 750 degrees Celsius to 800 degrees Celsius, and the heating rate is 10 degrees Celsius / minute;

[0030] Stabilize for 5 minutes;

[0031] Then open oxygen and nitrogen, the ratio of the gas that is introduced is: oxygen: nitrogen = 1:3, the opening rate is 7SLPM, the flow rate is 5SLPM, and it is stable for 3 minutes; then turn off the nitrogen, and it is stable for 3 minutes; then open the dichloroethylene, the flow rate 100SCCM, the opening rate is 1000SCCM, stable for 3 minutes;

[0032] Then heat up to 950 degrees Celsius, from 800 degrees Celsius to 950 degrees Celsius, heating rate=7 degrees Celsius / minute, and stabilize for 20 minutes;

[0033] Then turn off the dichloroethylene, and stabilize for 3 minutes;

[0034] Finally, the temperature is raised to 1280 degrees Celsius.

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PUM

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Abstract

The invention discloses a high-temperature oxidized dichloroethylene cleaning process for wafer processing, and relates to the field of diffusion furnace tube cleaning. The high-temperature oxidized dichloroethylene cleaning process for wafer processing comprises the following steps of heating a diffusion furnace tube to 800 DEG C; stabilizing for 1 to 10 minutes; introducing oxygen and nitrogen, and stabilizing for 1 to 5 minutes; closing the nitrogen, and stabilizing for 1 to 5 minutes; introducing dichloroethylene, and stabilizing for 1 to 5 minutes; raising the temperature to 950 DEG C, and stabilizing for 10 to 30 minutes; closing the dichloroethylene, and stabilizing for 1 to 5 minutes; and raising the temperature to 1200 to 1325 DEG C. According to the high-temperature oxidized dichloroethylene cleaning process for wafer processing provided by the invention, by reducing the cleaning temperature of the dichloroethylene, the defect density of the surface of an oxide layer is effectively reduced, and the surface of a silicon wafer is prevented from being damaged by byproducts decomposed by the dichloroethylene at high temperature.

Description

technical field [0001] The invention relates to the field of diffusion furnace tube cleaning, in particular to a high-temperature oxidized ethylene dichloride cleaning process for wafer processing. Background technique [0002] When the diffusion furnace tube is oxidized at high temperature, the temperature will reach 1200-1325 degrees Celsius. The current temperature range of dichloroethylene is generally below 1200 degrees Celsius. When the temperature is above 1200 degrees Celsius, especially above 1300 degrees Celsius, the gas pipeline and instantaneous When it is turned on, the vapor pressure of ethylene dichloride becomes higher, causing the gas to partially liquefy and decompose into by-products containing acidic components, which damage the surface of the silicon wafer and form corrosion pits. Contents of the invention [0003] Aiming at the problems existing in the prior art, the present invention aims to provide a cleaning process for avoiding damage to the surfa...

Claims

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Application Information

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IPC IPC(8): B08B9/027
CPCB08B9/027
Inventor 赵峰
Owner 联物科技实业无锡有限公司