A preliminary screening method and device for silicon carbide crystal ingots

A technology for preliminary screening and silicon carbide, applied in chemical instruments and methods, fine working devices, crystal growth, etc., can solve the problems of high work intensity, low visibility of silicon carbide ingots, and difficulty in human judgment. Work intensity, improve visibility, provide work efficiency effects

Active Publication Date: 2022-04-08
SICC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for silicon carbide ingots, the visibility is low, and human judgment is difficult, and at the same time, judgment errors are prone to occur.
The existing silicon carbide ingots need to be processed and sliced, and all the obtained wafers enter the quality inspection, remove the unqualified products and keep the qualified products, and the work intensity is relatively high.

Method used

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  • A preliminary screening method and device for silicon carbide crystal ingots
  • A preliminary screening method and device for silicon carbide crystal ingots
  • A preliminary screening method and device for silicon carbide crystal ingots

Examples

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Embodiment 1

[0049] refer to figure 1 , the present embodiment provides a preliminary screening device for silicon carbide ingots, the device includes a grinding processing unit and a detection unit, the grinding processing unit includes a placement platform 1, a grinding shaft 2 and a cutting structure 9, the placement platform 1 is used For placing the silicon carbide crystal ingot, the grinding shaft 2 is arranged above the placement platform 1, the grinding shaft 2 can rotate, the inner wall of the grinding shaft 2 is provided with a grinding surface, and the grinding surface can be in contact with the side of the silicon carbide crystal ingot, so that the silicon carbide crystal The sides of the ingot are ground. The grinding surface of the grinding shaft is used for grinding the side of the silicon carbide ingot; the bottom end of the grinding shaft 2 is detachably mounted with a grinding plate 5, and the grinding plate 5 is used for grinding the seed crystal surface of the silicon c...

Embodiment 2

[0064] This embodiment provides a method for preliminary screening of silicon carbide crystal ingots, the method comprising the following steps:

[0065] 1. Grinding the side of the silicon carbide ingot, and removing the seed crystal surface and convex surface of the silicon carbide ingot: place the silicon carbide ingot on the placement platform, and after fixing the silicon carbide ingot, control the movement of the grinding shaft , so that the silicon carbide crystal ingot is located inside the grinding shaft; the rotation of the grinding shaft is controlled so that the grinding shaft grinds the side of the silicon carbide crystal ingot; The plate contacts the seed crystal surface of the silicon carbide ingot; the rotation of the grinding shaft is controlled so that the grinding plate polishes and removes the seed crystal surface; the convex surface of the silicon carbide ingot is fixed upward, and the side of the silicon carbide ingot is fixed to control the movement of th...

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Abstract

The present invention provides a preliminary screening method and device for a silicon carbide crystal ingot, the method comprising the following steps: (1) grinding or cutting the surface of the silicon carbide crystal ingot to obtain a transparent or translucent silicon carbide crystal ingot; (2) Use an ultraviolet light source to irradiate the silicon carbide ingot to obtain the light transmission wavelength of the silicon carbide ingot, compare the light transmission wavelength with the standard color wavelength range to determine whether the micropipe density or inclusion density is qualified, and screen to obtain the micropipe The silicon carbide crystal ingot with qualified density or inclusion density is carried out in the next step; the standard color wavelength is the light-transmitting color wavelength of a standard silicon carbide crystal ingot with qualified micropipe and inclusion density after being irradiated with the same ultraviolet light source range. After grinding and cutting the silicon carbide ingot, the degree of visualization is improved, and the silicon carbide ingot with qualified micropipe density or inclusion density is screened by ultraviolet irradiation, which improves the accuracy of the initial screening and reduces the cost of subsequent processing. Detection of work intensity.

Description

technical field [0001] The present application relates to a preliminary screening method and device for silicon carbide crystal ingots, belonging to the technical field of semiconductor material processing equipment. Background technique [0002] After the silicon carbide crystal ingot is prepared, it needs to go through subsequent processing, quality inspection and other steps, and the products that pass the quality inspection can be further used. Since the crystal ingot needs to be sliced ​​during processing, not only the workload is heavy; but also if the defective products fail to pass the quality inspection, the overall utilization of the defective products is limited because they have already been sliced. [0003] After the silicon carbide crystal ingot is opened, human judgment can be carried out, and preliminary screening can be carried out to remove obviously unqualified products, which can reduce the workload of subsequent processing and quality inspection. Howeve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/00C30B29/36B24B19/22B28D5/02B07C5/34
CPCC30B33/00C30B29/36B24B19/22B28D5/02B07C5/3416
Inventor 李帅黄长航赵建国李函朔
Owner SICC CO LTD
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