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Heat dissipation device of power device gate region and manufacturing method

A technology for power devices and heat dissipation devices, applied in the field of heat dissipation devices, can solve the problems of transmission, large contact thermal resistance, unfavorable chip heat, etc.

Active Publication Date: 2021-06-08
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional packaging heat dissipation requires the addition of thermal interface materials between the electronic chip and the heat sink, which introduces a large contact thermal resistance, which is not conducive to the heat transfer from the chip to the heat sink
At the same time, the traditional microneedle fin heat dissipation structure has the problem of large temperature difference between the inlet and outlet, which may affect the performance of electronic devices

Method used

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  • Heat dissipation device of power device gate region and manufacturing method
  • Heat dissipation device of power device gate region and manufacturing method
  • Heat dissipation device of power device gate region and manufacturing method

Examples

Experimental program
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Embodiment 1

[0035] Such as Figure 1 to Figure 5 As shown in the first aspect of the present invention, a heat dissipation device for the gate region of a power device includes a silicon substrate 1, a flow channel layer assembly, a coolant and pin fins 8, and the flow channel layer assembly and the silicon substrate 1 are detachably connected. , the flow channel layer assembly and the silicon substrate 1 are provided with a power chip 7, the flow channel layer assembly is provided with a plurality of needle fins 8, and the silicon substrate 1 is provided with a first liquid inlet 4 and a first liquid outlet 5 , when working, the coolant enters the cavity formed after the connection between the silicon substrate 1 and the flow channel layer assembly through the first liquid inlet 4, and then passes through the pin fins 8 to make the power chip 7 on the silicon substrate 1 and the flow channel layer assembly The power chip 7 can quickly dissipate heat, and finally, the coolant flows out th...

Embodiment 2

[0059] A method for manufacturing a heat dissipation device for a gate region of a power device in this embodiment, using a heat dissipation device for a gate region of a power device as in Embodiment 1, includes the following steps:

[0060] Step 1. Double-sided polishing of the silicon wafer, followed by standard organic cleaning, acetone ultrasonication, isopropanol ultrasonication, deionized water ultrasonication, and nitrogen blow-drying;

[0061] Step 2. Design and process the photolithographic plate according to the pattern of pin fins 8, first use photoresist to spin coat, and then use a photolithography machine to perform photolithography;

[0062] Step 3, defining the needle fins 8 in the first flow channel layer 2 and the needle fins 8 in the second flow channel layer 3 by etching to form a coolant chamber and flow channel, and perform oxygen ion plasma treatment before etching, Then perform deep silicon etching;

[0063] Step 4, performing laser drilling on the fi...

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Abstract

The invention discloses a heat dissipation device of a power device gate region and a manufacturing method, the heat dissipation device comprises a silicon substrate, a flow channel layer assembly, a coolant and pin fins, the flow channel layer assembly is detachably connected with the silicon substrate, power chips are arranged on the flow channel layer assembly and the silicon substrate, a plurality of pin fins are arranged on the flow channel layer assembly, the silicon substrate is provided with a first liquid inlet and a first liquid outlet, during working, a coolant enters a cavity formed after the silicon substrate and the flow channel layer assembly are connected through the first liquid inlet, then the power chips on the silicon substrate and the power chips on the flow channel layer assembly are rapidly cooled through the pin fins, and the coolant flows out through the first liquid outlet. The invention belongs to the technical field of heat dissipation devices, and aims to solve the problem of poor heat dissipation effect of an electronic component heat dissipation device in the prior art. The technical effect that the device is good in heat dissipation performance is achieved.

Description

technical field [0001] The present invention relates to the technical field of heat dissipation devices, in particular to a heat dissipation device for a gate region of a power device, and also to a method for manufacturing the heat dissipation device for a gate region of a power device. Background technique [0002] In recent years, with the miniaturization of electronic devices and the increase in operating speed, as well as the wide application of power devices, the thermal management of electronic systems has become a major challenge to ensure the performance and stability of electronic systems. The use of flow boiling of microfluidics to dissipate heat from high heat flux devices has great potential. Compared with the flat micro-channel heat dissipation structure, the widely studied microneedle fin microfluidic heat dissipation structure has better turbulence and heat dissipation performance. At the same time, it can be integrated with RF systems with vertical silicon v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/473H01L23/367H01L23/427H01L25/07H01L21/50
CPCH01L23/473H01L23/367H01L23/427H01L25/072H01L25/50H01L2224/48091H01L2924/00014
Inventor 王振宇刘远洋李伟刘宗玺张鑫
Owner PEKING UNIV