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Diffusion welding method for cobalt target and copper-chromium alloy back plate

A technology of diffusion welding and copper-chromium alloy, applied in welding equipment, non-electric welding equipment, metal processing equipment, etc., can solve the problems of cumbersome preparation, low efficiency, high energy consumption, etc., to expand the contact area, avoid welding seam, and improve the quality of finished products rate effect

Pending Publication Date: 2021-06-11
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, on the one hand, the multi-layer composite material middle layer in the welding method includes 2 to 3 layers of metal materials, which can be directly stacked successively by sheet-like metal materials during preparation, or on aluminum or copper sheets by electroplating, hot The preparation of the zinc layer by immersion plating, spraying, sputtering or vacuum evaporation is not only cumbersome, but also has the disadvantages of low efficiency and high energy consumption; on the other hand, the welding method does not distinguish between different materials of copper alloy backplane Set Diffusion Welding Specific Conditions

Method used

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  • Diffusion welding method for cobalt target and copper-chromium alloy back plate
  • Diffusion welding method for cobalt target and copper-chromium alloy back plate
  • Diffusion welding method for cobalt target and copper-chromium alloy back plate

Examples

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Embodiment 1

[0066] This embodiment provides a method for diffusion welding of a cobalt target and a copper-chromium alloy backplane, such as figure 1 Shown, described diffusion welding method comprises the steps:

[0067] (1) Prepare a circular cobalt target material 1 with a purity of 5N, a diameter of 430 mm, and a thickness of 4 mm. On the welding surface of the cobalt target material 1, first use a white corundum grinding wheel for grinding to complete the polishing process, and then use Milling to obtain the target thread, and then using vacuum magnetron sputtering to plate the first titanium film 2 on the target thread; wherein, in the target thread, the pitch between two adjacent thread protrusions is 0.45 mm, the thread depth corresponding to the thread protrusion is 0.15 mm, the thickness of the first titanium film 2 is controlled to be 4.5 μm, the current of the vacuum magnetron sputtering is 20A, the bias voltage is 100V, and the temperature is 120°C , the time is 4.5h;

[00...

Embodiment 2

[0074] This embodiment provides a method for diffusion welding of a cobalt target and a copper-chromium alloy backplane, except that the "obtaining the target thread by milling" described in step (1) is omitted, and the first titanium film is directly plated after the polishing treatment , other conditions are exactly the same as in Example 1.

Embodiment 3

[0076] This example provides a method for diffusion welding of a cobalt target and a copper-chromium alloy backplane, except that the temperature of the hot isostatic pressing described in step (3) is replaced by 390°C from 395°C, other conditions are exactly the same as in Example 1 same.

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Abstract

The invention relates to a diffusion welding method for a cobalt target and a copper-chromium alloy back plate. The diffusion welding method comprises the following steps that a first titanium film is further plated on the welding surface of the cobalt target on the basis that an aluminum intermediate layer is arranged according to the material characteristics of the copper-chromium alloy back plate; a back plate thread with a second titanium film plated on the surface is arranged on the bottom face of the groove of the copper-chromium alloy back plate, then the aluminum middle layer and the cobalt target plated with the first titanium film are sequentially placed into the groove to be assembled, diffusion welding of the cobalt target and the copper-chromium alloy back plate is completed through hot isostatic pressing, it can be guaranteed that the welding binding rate is larger than or equal to 99%, and the yield can be greatly improved; and it can be guaranteed that the welding bonding strength of the cobalt target and the aluminum intermediate layer is larger than or equal to 100 MPa, the welding bonding strength of the copper-chromium alloy back plate and the aluminum intermediate layer is larger than or equal to 100 MPa, and the use requirement of the semiconductor sputtering target material can be met.

Description

technical field [0001] The invention relates to a welding method of a target assembly, in particular to a diffusion welding method of a cobalt target and a copper-chromium alloy back plate. Background technique [0002] In the manufacture of large-scale integrated circuits, the target component is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat, which can effectively ensure the sputtering control of the target under the action of a magnetic field and an electric field. However, with the development of semiconductor technology, the target is becoming more and more precise, the size is getting larger and the service life is getting longer and longer, resulting in the working temperature of the target component as high as 300°C to 500°C; in addition, ...

Claims

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Application Information

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IPC IPC(8): B23K20/02B23K20/233B23K20/24
CPCB23K20/026B23K20/2333B23K20/24
Inventor 姚力军边逸军潘杰王学泽黄东长
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD