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Diffusion welding method for cobalt target and copper-zinc alloy back plate

A diffusion welding and target technology, applied in the field of diffusion welding of cobalt target and copper-zinc alloy backplate, can solve the problems of high energy consumption, low efficiency, complicated preparation, etc., to expand the contact area, avoid welds, enhance The effect of welding bond strength

Pending Publication Date: 2021-06-11
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, on the one hand, the multi-layer composite material middle layer in the welding method includes 2 to 3 layers of metal materials, which can be directly stacked successively by sheet-like metal materials during preparation, or on aluminum or copper sheets by electroplating, hot The preparation of the zinc layer by immersion plating, spraying, sputtering or vacuum evaporation is not only cumbersome, but also has the disadvantages of low efficiency and high energy consumption; on the other hand, the welding method does not distinguish between different materials of copper alloy backplane Set Diffusion Welding Specific Conditions

Method used

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  • Diffusion welding method for cobalt target and copper-zinc alloy back plate
  • Diffusion welding method for cobalt target and copper-zinc alloy back plate
  • Diffusion welding method for cobalt target and copper-zinc alloy back plate

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Embodiment 1

[0060] This embodiment provides a method for diffusion welding of a cobalt target and a copper-zinc alloy backplane, such as figure 1 Shown, described diffusion welding method comprises the steps:

[0061] (1) Prepare a circular cobalt target 1 with a purity of 5N and a diameter of 430 mm. On the welding surface of the cobalt target 1, first use a white corundum grinding wheel to complete the polishing process, and then use vacuum magnetron sputtering to plate titanium Film 2, the thickness of the titanium film 2 is controlled to be 4.5 μm, the current of the vacuum magnetron sputtering is 20A, the bias voltage is 100V, the temperature is 120°C, and the time is 4.5h; C46400 copper with grooves is prepared Zinc alloy back plate 3, the bottom surface of the groove is ground with a white corundum grinding wheel to complete the polishing process, and the roundness and assembly dimensional tolerance of the groove are monitored to ensure a 430mm circular cobalt target 1 It can just...

Embodiment 2

[0066] This embodiment provides a method for diffusion welding of a cobalt target and a copper-zinc alloy backplane, such as figure 2 As shown, in addition to adding thread treatment to the welding surface of the cobalt target in step (1), other conditions are exactly the same as in Example 1, and the details are as follows:

[0067] (1) Prepare a round cobalt target material 1 with a purity of 5N and a diameter of 430mm. On the welding surface of the cobalt target material 1, first use a white corundum grinding wheel to complete the polishing process, and then use milling for thread processing. In the threads obtained by the above thread processing, the pitch between two adjacent thread protrusions is 0.45mm, and the thread depth of the threads is 0.15mm, and then vacuum magnetron sputtering titanium coating 2 is used to control the titanium film The thickness of 2 is 4.5 μm, the current of the vacuum magnetron sputtering is 20A, the bias voltage is 100V, the temperature is ...

Embodiment 3

[0070] This embodiment provides a method for diffusion welding of a cobalt target and a copper-zinc alloy backplane, except that the thickness of the titanium film in step (1) is replaced by 3 μm from 4.5 μm, and other conditions are exactly the same as in Example 1.

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Abstract

The invention relates to a diffusion welding method for a cobalt target and a copper-zinc alloy back plate. The diffusion welding method comprises the steps of: plating a titanium film on the welded surface of the cobalt target, assembling the cobalt target plated with the titanium film and the copper-zinc alloy back plate, and then integrally putting the cobalt target material and the copper-zinc alloy back plate into a sheath; and after the obtained sheath is sealed, degassing treatment and hot isostatic pressing treatment are sequentially carried out, the sheath is removed, and diffusion welding of the cobalt target and the copper-zinc alloy back plate is completed. According to the diffusion welding method, the atomic diffusion rate between the cobalt target and the copper-zinc alloy back plate can be increased by utilizing the good diffusivity of metal titanium only by plating the titanium film on the welded surface of the cobalt target according to the material characteristics of the copper-zinc alloy back plate without arranging an intermediate layer, the welding binding rate can be ensured to be greater than or equal to 99%, and the yield is greatly improved; and it can be guaranteed that the welding bonding strength is larger than or equal to 70 MPa, welding deformation is avoided, and the use requirement of a semiconductor sputtering target is met.

Description

technical field [0001] The invention relates to a welding method of a target assembly, in particular to a diffusion welding method of a cobalt target and a copper-zinc alloy back plate. Background technique [0002] In the manufacture of large-scale integrated circuits, the target component is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat, which can effectively ensure the sputtering control of the target under the action of a magnetic field and an electric field. However, with the development of semiconductor technology, the target is becoming more and more precise, the size is getting larger and the service life is getting longer and longer, resulting in the working temperature of the target component as high as 300°C to 500°C; in addition, one ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K20/02B23K20/24
CPCB23K20/026B23K20/24
Inventor 姚力军边逸军潘杰王学泽黄东长
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD