Silicon polished wafer alkali corrosion process

A technology of silicon polishing and alkali etching, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems that the alkali etching process cannot meet the higher quality requirements, so as to improve the surface appearance, increase the yield rate, and reduce the The effect of surface contamination

Pending Publication Date: 2021-06-11
中环领先半导体材料有限公司 +1
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  • Application Information

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Problems solved by technology

With the reduction of semiconductor feature size and the improvement of integration, the geometric parameters of silicon wafers are becoming higher and higher, and the original alkali etching process cannot meet the higher quality requirements.

Method used

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Embodiment

[0032] Raw materials: 200 pieces of 8-inch lightly mixed grinding discs;

[0033] Requirements: After grinding, the thickness is 770±3um, TTV≤1.5um, and the surface is free from scratches, chipping, and contamination.

[0034] Processing equipment: ASE thinning cleaning machine, ASE post-rot cleaning machine;

[0035] Measuring tools: ADE7200, strong light;

[0036] Excipients: KOH, HF acid, HCL acid, ammonia water, hydrogen peroxide, other related reagents, etc.;

[0037] Specific operation process: Alkali corrosion process uses ASE thinning cleaning machine for alkali corrosion. Before alkali corrosion, the surface of the grinding plate is required to be clean and free of contamination. Before loading silicon wafers, first raise the temperature of SC1-1 and SC1-2 to 75 °C , the temperature of the KOH chemical solution is raised to 80°C, and then the time of each chemical solution tank is set to SC1-1, and the time of SC1-2 is set to 300s, and then the silicon wafer is plac...

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Abstract

The invention provides a silicon polished wafer alkali corrosion process. The silicon polished wafer alkali corrosion process comprises the following steps: sequentially executing SC2 liquid medicine, a washing tank, SC1-2 liquid medicine, a washing tank, a KOH liquid medicine tank, a QDR washing tank, SC1-2 liquid medicine, ultrasonic washing tank medicine, overflow washing tank and spin-drying process treatment; wherein the KOH liquid corrosion time is controlled to be 500 + / -20 s, the rotating speed of a KOH liquid tank roller is 10-30 r / min, the KOH flow is 28 + / -5 L / min, and TTV of the silicon wafer is controlled. According to the alkali corrosion process for the silicon polished wafer, the corrosion rate of KOH to the silicon wafer in the alkali corrosion process and residual liquid medicine of KOH on the surface of the silicon wafer are controlled by improving process parameters in the alkali corrosion process, and the TTV (surface flatness) and surface appearance of alkali corrosion of the silicon wafer are improved. Compared with the prior art, the surface contamination of the alkali corrosion product can be reduced, the TTV (surface flatness) is effectively controlled, and the yield of the alkali corrosion product is improved.

Description

technical field [0001] The invention belongs to the technical field of silicon wafer corrosion, and in particular relates to a silicon polishing wafer alkali corrosion process. Background technique [0002] Alkali etching is a very important process in the process of silicon wafer processing. After alkali etching and the surface appearance of silicon wafers are very important parameters, it is also a parameter that is difficult to optimize in the silicon wafer etching process. Alkali etching of silicon wafers is to corrode the damaged layer on the surface of the ground silicon wafers through the chemical action of strong alkali, and meet certain geometric parameters and surface appearance requirements. With the reduction of semiconductor feature size and the improvement of integration, the geometric parameters of silicon wafers are required to be higher and higher, and the original alkali etching process cannot meet the higher quality requirements. Contents of the inventio...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02019H01L21/02035
Inventor 史延爽王帅谢琼震郭会波白玉麟孙晨光王彦君
Owner 中环领先半导体材料有限公司
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