Gaussian meter probe for testing electrical performance of InP indium phosphide single crystal wafer, testing device and testing method
A technology of electrical performance testing and indium phosphide, which is applied in the field of Gauss meter probes, can solve problems such as measurement methods that are rarely mentioned, and achieve the effect of preventing customer returns.
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Embodiment 1
[0036] Such as Figure 1-2As shown, a Gaussmeter probe used for the electrical performance test of an InP indium phosphide single chip includes a probe body, a test sample and a data line; one end of the probe body is a sample end, the other end is an outlet end, and the sample end of the probe body is set There is a square groove; one end of the data line is branched into four control lines, which are respectively located at the four corners of the square groove, and the other end of the data line passes through the outlet end of the probe body; the test sample is located in the square groove; the four control lines The ends of the wires are respectively connected with platinum-rhodium wires as conductor connecting wire ends, and the conductor connecting wire ends are welded to the test sample; the diameter of the platinum-rhodium wire is 0.1 mm; the length of each platinum-rhodium wire is 5 mm; the test sample is the side length 8mm square piece.
Embodiment 2
[0038] Such as image 3 As shown, a kind of electrical performance testing device with magnetic field rotation adjustment function is used in conjunction with the Gauss meter probe used for InP indium phosphide single chip electrical performance testing in Example 1, including a first copper coil, a second copper coil, Connecting shaft, confining swivel cover and position adjustment ring;
[0039] Both ends of the first copper coil and the second copper coil are respectively provided with an inner stop ring and an outer stop ring;
[0040] Both the first copper coil and the second copper coil are threadedly connected on the connecting shaft, the inner retaining ring of the first copper coil is adjacent to the inner retaining ring of the second copper coil, and the interval is greater than zero, and the two ends of the connecting shaft respectively exceed the second The outer retaining ring of the first copper coil and the outer retaining ring of the second copper coil; the in...
Embodiment 3
[0043] On the basis of Embodiment 2, the following improvements have been further made: for the convenience of use, the above-mentioned electrical performance testing device with the magnetic field rotation adjustment function also includes a support, and the support includes two oppositely arranged annular supports, the first copper coil The outer retaining ring of the first copper coil and the outer retaining ring of the second copper coil respectively protrude into and are supported on two oppositely arranged annular supports. For the convenience of use, a first rotary handle is provided on the outside of the confinement rotary cover; a second rotary handle is provided on the outside of the position adjustment ring.
[0044] A method for testing the electrical performance of an InP indium phosphide single chip, using the above-mentioned Gauss meter probe for testing the electrical performance of an InP indium phosphide single chip and the above-mentioned electrical performan...
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Abstract
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