The invention provides sputtering equipment and method capable of adjusting film stress. The equipment comprises a cavity, a magnetron sputtering device, a baffle, a wafer pressing ring, a base and an electromagnetic coil module; one end of the wafer pressing ring is adjacent to the baffle, and the other end of the wafer pressing ring extends above the edge of the base; the base is connected with a grid bias power supply; the electromagnetic coil module is located in the base and / or between the wafer pressing ring and the base and comprises a plurality of electromagnetic coil sets, each electromagnetic coil set comprises an N-pole electromagnet and an S-pole electromagnet, the N-pole electromagnet in the single electromagnetic coil set is adjacently arranged on the left side of the corresponding S-pole electromagnet, and the N-pole magnetic pole face of each N-pole electromagnet and the S-pole magnetic pole face of each S-pole electromagnet face upwards or downwards at the same time; and in the sputtering process, the plurality of electromagnetic coil sets are divided into a plurality of power-on units, the plurality of power-on units are sequentially and alternately powered on and powered off in the clockwise or anticlockwise direction, so that a film is deposited on the surface of a substrate, and the film stress is adjusted. According to the sputtering equipment and the method capable of adjusting the film stress, and the film thickness and stress distribution uniformity can be improved.