Semiconductor process equipment

A process equipment and semiconductor technology, applied in semiconductor/solid-state device manufacturing, metal material coating process, vacuum evaporation plating, etc., can solve the problems of difficult detection of film deposition rate, etc., and achieve low detection difficulty, not easy to damage, The effect of simple process

Active Publication Date: 2021-06-22
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention discloses a semiconductor process equipment to solve the problem that

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor process equipment
  • Semiconductor process equipment
  • Semiconductor process equipment

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0024] In order to make the objects, technical solutions, and advantages of the present invention, the technical solutions of the present invention will be described in conjunction with specific embodiments and appended claims. Obviously, the described embodiments are merely embodiments of the invention, not all of the embodiments. Based on the embodiments of the present invention, there are all other embodiments obtained without making creative labor without making creative labor premises.

[0025] The technical solution disclosed in various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0026] Such as Figure 1 ~ 5 As shown, the present invention discloses a semiconductor process apparatus for depositing a film having a film 500, the sputtering material employed by Cu, Ta, Ti, Al, etc.. The disclosed semiconductor process apparatus includes a deposition chamber 100, a device receiving chamber 200 and a detecti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses semiconductor process equipment. The semiconductor process equipment comprises a deposition chamber (100), a device accommodating chamber (200) and a detection device (300), a first through hole (110) is formed in the deposition chamber (100); the device accommodating chamber (200) communicates with the deposition chamber (100) through the first through hole (110); and the detection device (300) is provided with a to-be-detected piece (330), the to-be-detected piece (330) is arranged in the device accommodating chamber (200), and the detection device (300) is used for driving the to-be-detected piece (330) to penetrate through the first through hole (110) to extend into the deposition chamber (100) and obtaining the thin film deposition rate of the semiconductor process equipment by detecting the vibration frequency change of the to-be-detected piece (330). According to the scheme, the problem that the thin film deposition rate of semiconductor process equipment is difficult to detect can be solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a semiconductor process equipment. Background technique [0002] Physical vapor deposition technology is widely used in the field of semiconductor manufacturing, including vacuum evaporation, sputtering coating, molecular beam epitaxy, etc. Among them, sputtering coating is widely used in the metal thin film process. The basic principle of sputtering coating is to introduce process gas in a high vacuum environment and apply a voltage across the electrodes to make the gas generate glow discharge. At this time, the positive ions in the plasma hit the target under the action of a strong electric field. , the target metal atoms are sputtered and deposited on the surface of the wafer. [0003] In order to improve the yield rate of wafer coating, it is usually necessary to detect the film deposition rate of semiconductor process equipment, so that the stable s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/34C23C14/54C23C14/16H01L21/67
CPCC23C14/34C23C14/546C23C14/165H01L21/67253
Inventor 李默林
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products