Flexible optoelectronic device design method for realizing low-angle dependence, high-light absorption and stable flexible contact and light detector

Abstract

Inspired by a divergent quasi-spherical symmetric structure of the sun-loving characteristic of marigold flowers, the invention discloses a divergent low-angle light capture structure with the quasi-spherical symmetric characteristic to realize a high-performance flexible self-powered light detector and a preparation method thereof. According to the invention, the stability of the photoelectric property of the flexible photoelectric device is ensured from the two aspects of optical light absorption invariance and electrical contact invariance in the flexible bending process of the flexible photoelectric device by utilizing the quasi-sphere symmetrical divergent structure. According to the invention, a nanostructure with high light absorption is designed by creatively using asymmetric electrodes, and a self-powered flexible broadband optical detector with low-angle high light absorption and stable physical contact is manufactured by using semiconductor nanospheres. The problem of energy supply of a traditional flexible photoelectric device, the problem of poor flexible bending performance and the problem of low light absorption of planar and array molybdenum sulfide are solved. The high light absorption characteristic and the physical contact invariant characteristic of the divergent quasi-spherical symmetric nanostructure have universality for improving the light absorption capability and the flexibility of various semiconductors.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a quasi-spherical symmetrical nanostructure flexible photodetector with high light absorption and stable physical contact and a manufacturing method thereof. Background technique [0002] As one of the widely used transition metal sulfides, molybdenum disulfide (MoS 2 ) are promising materials for electronics and photonics applications. In particular, flake MoS with variable bandgap (1.2–1.8eV) 2 Due to its unique properties such as high carrier mobility, strong electron-hole confinement, and high light absorption, it has a wide range of applications, including electronic sensors, energy storage devices, supercapacitors, optoelectronic devices, catalysis, and biological Molecular detection. For optoelectronic device applications, although MoS 2 The light absorption can reach 5-10% of the incident sunlight when the thickness is less than 1nm, but du...

AI Technical Summary

Problems solved by technology

Furthermore, the narrow light absorption and incompatibility of crystalline films and substrates are other key factors limiting the performance of organic optoelectronic devices

Images