Silicon carbide MOSFET drive circuit

Abstract

The invention discloses a silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) driving circuit which comprises an anti-bridge-arm crosstalk circuit, the anti-bridge-arm crosstalk circuit comprises a driving chip U1, a capacitor C5 and a switching tube T1, and an output end of the driving chip U1 is connected with one end of the capacitor C5 and is connected with a grid electrode of a silicon carbide MOSFET; the other end of the capacitor C5 is connected with a collector electrode of the switch tube T1, an emitter electrode of the switch tube T1 is connected with a source electrode of the silicon carbide MOSFET and is connected with a grounding end GND3, and a base electrode of the switch tube T1 is connected with a grid electrode of the silicon carbide MOSFET. The silicon carbide MOSFET driving circuit has the advantages of simple structure, bridge arm crosstalk prevention, common mode interference suppression, short circuit protection, overvoltage protection and the like.

Description

technical field [0001] The invention mainly relates to the technical field of electronic devices, in particular to a silicon carbide MOSFET driving circuit. Background technique [0002] Wide-bandgap semiconductor devices represented by silicon carbide (Silicon Carbide, SiC) MOSFETs have become ideal for high-frequency, high-temperature, high-power-density motor controllers due to their advantages such as high switching frequency, high switching speed, and high thermal conductivity. choose. As the switching speed of SiC MOSFET increases, the influence of parasitic parameters is intensified, and the phenomenon of bridge arm crosstalk and common mode interference becomes more serious. Since the positive threshold voltage and negative safety voltage of SiC MOSFET are small, the positive and negative voltage spikes caused by the crosstalk problem are more likely to cause false conduction of the switch tube or breakdown of the gate and source, which will increase the switching l...

AI Technical Summary

Problems solved by technology

As the switching speed of SiC MOSFET increases, the influence of parasitic parameters is intensified, and the bridge arm crosstalk and common mode interference are more serious

Due to the small positive threshold voltage and negative safety voltage of SiC MOSFET, the positive and negative voltage spikes caused by crosstalk are more likely to cause false conduction of the switch tube or breakdown of the gate and source, which will increase the switching loss and damage the switch tube in severe cases.

The logic error of the driver chip caused by the common mode interference problem leads to improper turn-on or turn-off, which leads to the direct connection of the bridge arm, which in turn leads to the failure of the power device

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