Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of organic dopant DMAI in efficient inorganic CsPbI3 perovskite

A perovskite and dopant technology, which is applied in the field of N,N-dimethylammonium iodide preparation, can solve the problems of reducing the photoelectric conversion efficiency of perovskite cells, increasing grain boundaries, etc., so as to improve the photoelectric conversion efficiency, Effects of high crystallinity, improved stability and optoelectronic properties

Active Publication Date: 2021-07-02
LANZHOU UNIVERSITY
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The study found that when there are many pores, small grain size, and low coverage in the perovskite film, the grain boundaries will increase significantly, which may increase the CsPbI 3 The probability of phase transition of perovskite materials, more importantly, will significantly reduce the photoelectric conversion efficiency of perovskite cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of organic dopant DMAI in efficient inorganic CsPbI3 perovskite
  • Preparation method of organic dopant DMAI in efficient inorganic CsPbI3 perovskite
  • Preparation method of organic dopant DMAI in efficient inorganic CsPbI3 perovskite

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] a. Add 20ml of hydroiodic acid solution to 20ml of N,N-dimethylformamide solution to form a mixed solution, stir at low temperature for 4h, and mark it as solution A.

[0028] b. Rotate solution A in a water bath at 90°C for 3 hours, until it becomes viscous;

[0029] c. Dissolve the viscous substance in 50ml of ethanol to form a clear solution B;

[0030] d. Add 250ml of diethyl ether into solution B, extract the precipitate, and mark it as C precipitate;

[0031] e. heat-treat the C precipitate prepared above in an oven at 40° C. for more than 4 hours to obtain DMAI powder with high crystallinity.

[0032] Embodiment 1 utilizes the inorganic CsPbI prepared by gained DMAI powder 3 The scanning electron microscope image of the perovskite thin film is shown in figure 2 shown.

Embodiment 2

[0034] a. Add 40ml of hydroiodic acid solution to 20ml of N,N-dimethylformamide solution to form a mixed solution, stir at low temperature for 4h, and mark it as solution A.

[0035] b. Rotate solution A in a water bath at 90°C for 3.5 hours, until it becomes viscous;

[0036] c. Dissolve the viscous substance in 60ml of ethanol to form a clear solution B;

[0037] d. Add 300ml of diethyl ether into solution B, extract the precipitate, and mark it as C precipitate;

[0038] e. heat-treat the C precipitate prepared above in an oven at 40° C. for more than 4 hours to obtain DMAI powder with high crystallinity.

[0039] Embodiment 2 utilizes the inorganic CsPbI prepared by gained DMAI powder 3 The scanning electron microscope image of the perovskite thin film is shown in image 3 shown.

Embodiment 3

[0041] a. Add 60ml of hydroiodic acid solution to 20ml of N,N-dimethylformamide solution to form a mixed solution, stir at low temperature for 4h, and mark it as solution A.

[0042] b. Rotate solution A in a water bath at 90°C for 4 hours, until it becomes viscous;

[0043] c. Dissolve the viscous substance in 70ml of ethanol to form a clear solution B;

[0044] d. Add 350ml of diethyl ether into solution B, extract the precipitate, and mark it as C precipitate;

[0045] e. heat-treat the C precipitate prepared above in an oven at 40° C. for more than 4 hours to obtain DMAI powder with high crystallinity.

[0046] The obtained DMAI powder of embodiment 3 prepares inorganic CsPbI 3 The scanning electron microscope image of the perovskite thin film is shown in Figure 4 As shown, the grain size is more obvious, and the film is denser and smoother.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of preparation methods of N, N-dimethyl ammonium iodide (DMAI), and particularly relates to a preparation method of organic dopant DMAI in efficient inorganic CsPbI3 perovskite. The DMAI prepared by mixing hydroiodic acid (HI) and N, N-dimethylformamide (DMF) in different proportions can serve as an organic additive for preparing an inorganic CsPbI3 perovskite thin film, the surface smoothness and the grain size of the thin film can be remarkably improved, the defects of the thin film are reduced to a certain degree, the transport capacity of current carriers is enhanced to a certain degree, and finally the photoelectric conversion efficiency of a perovskite battery is improved.

Description

technical field [0001] The invention belongs to the field of preparation methods of N,N-dimethylammonium iodide, in particular to a high-efficiency inorganic CsPbI 3 Preparation method of organic dopant DMAI in perovskite. Background technique [0002] After more than ten years of development, the photoelectric conversion efficiency of perovskite cells has increased from the original 3.8% to the current 25.5%, which is gradually approaching the theoretical efficiency and showing broad application prospects. Inorganic CsPbI 3 Due to the good thermal stability and suitable bandgap width (1.72eV) of the perovskite material, the all-inorganic perovskite battery composed of it has excellent photoelectric performance similar to that of the organic-inorganic hybrid perovskite battery. The field shows great potential for development. It is worth noting that the photoelectric conversion efficiency of perovskite cells is directly related to the quality of perovskite thin film mater...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07C209/62C07C209/74C07C209/84C07C211/04H01L31/0264
CPCC07C209/62C07C209/74C07C209/84H01L31/0264C07C211/04Y02P70/50
Inventor 兰伟靳志文赵静王倩
Owner LANZHOU UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com