Pattern complementary composite substrate, preparation method and LED epitaxial wafer

Abstract

The embodiment of the invention discloses a pattern complementary composite substrate, a preparation method and an LED epitaxial wafer. The preparation method of the pattern complementary composite substrate comprises the following steps: providing a plain film substrate; patterning the plain film substrate by using a first mask, and forming a plurality of first pattern microstructures on the first surface of the plain film substrate; forming a heterogeneous material layer on the first surface of the plain film substrate; patterning the heterogeneous material layer by using a second mask to form a plurality of second pattern microstructures, wherein the first pattern microstructures and the second pattern microstructures are convex microstructures or concave microstructures respectively, and the vertical projections of the first pattern microstructure and the second pattern microstructure on the first surface of the plain film substrate are not overlapped with each other. The problem that an existing patterned substrate cannot meet the requirement of an LED chip can be solved, the stress of an epitaxial layer can be reduced, and the growth quality of epitaxial crystals can be improved; meanwhile, the light emitting efficiency of light rays is improved, and the internal quantum efficiency and the external quantum extraction rate of the LED chip are improved.

Description

technical field [0001] The embodiments of the present invention relate to the field of semiconductor technology, in particular to a pattern complementary composite substrate, a preparation method and an LED epitaxial wafer. Background technique [0002] As we all know, the current production of patterned substrates is to produce periodically arranged patterns on the surface of epitaxial substrates through the patterned sapphire substrate (Patterned Sapphire Substrate, PPS) process technology, the yellow light station is exposed through a mask, and then passed through Inductive Coupled Plasma (ICP) etching transfers the mask pattern to the wafer surface, so that the corresponding pattern with the mask layout sample is obtained on the substrate surface, and the epitaxial growth is controlled by controlling the pattern specification of the substrate surface parameter to grow higher quality CaN. However, with the rapid development of the LED display industry, the consumer marke...

AI Technical Summary

Problems solved by technology

However, with the rapid development of the LED display industry, the consumer market has higher and higher requirements for product quality and brightness. The traditional method of controlling the specifications of micro-nano patterned substrates is difficult to meet the demand for LED chips.

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