Preparation method of chromium-silicon alloy sputtering target material
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A chromium-silicon alloy and sputtering target technology, which is applied in the field of preparation of chromium-silicon alloy sputtering targets, and achieves the effects of meeting the requirements of purity and density and having a simple preparation method.
Active Publication Date: 2021-07-06
KONFOONG MATERIALS INTERNATIONAL CO LTD
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The preparation method can only realize the preparation of chromium-silicon alloy sputtering targets with a silicon content of 40-70wt%, and for the preparation of sputtering targets with a silicon content of <40wt% and a low silicon content, new conditions need to be explored. To ensure that the density and purity of the low-silicon content sputtering target can meet the process requirements
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[0083](4) Carry out the second heat treatment, the first pressurization, the second pressurization and heat preservation and pressure keeping in sequence; the temperature of the second heat treatment is 1330°C, the heating rate is 5.5°C / min, and the holding time is 70min; the first The pressurization is uniformly pressurized to 20MPa for 50min; the second pressurization is uniformly pressurized to 30MPa for 50min; the time for the heat preservation and pressure holding is 140min;
[0084] (5) After heat preservation and pressure holding, helium replacement is carried out until the pressure is -0.07MPag, and then cooled to 180°...
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Abstract
The invention provides a preparation method of a chromium-silicon alloy sputtering target material. The preparation method comprises the following steps that chromium powder and silicon powder are subjected to ball-milling and mixing in a protective atmosphere to obtain a mixture, and the mass fraction of the silicon powder in the mixture is not more than 16wt%; the obtained mixture is loaded into a mold and compacted, and then vacuum-pumping treatment is carried out; after the vacuumizing treatment is completed, first heat treatment is carried out, and the pressure in the first heat treatment process does not exceed 6 MPa; second heat treatment, first pressurization, second pressurization and heat preservation and pressure maintaining are carried out in sequence; after heat preservation and pressure maintaining are finished, protective gas replacement is carried out till the pressure ranges from-0.06 MPag to-0.08 MPag, and then cooling in furnace is carried out; and machining is carried out to a required size to complete the preparation of the chromium-silicon alloy sputtering target material. According to the preparation method, the chromium-silicon alloy target material with the silicon content not exceeding 16wt% can be prepared, and the density of the prepared target material is greater than 99%, the purity is greater than or equal to 99.95%, and the requirements of magnetron sputtering on the purity and density of the target material are met.
Description
technical field [0001] The invention belongs to the technical field of semiconductors and relates to a method for preparing a target, in particular to a method for preparing a chromium-silicon alloy sputtering target. Background technique [0002] Physical vapor deposition refers to the use of low-voltage, high-current arc discharge technology under vacuum conditions, using gas discharge to evaporate the material source and ionize both the evaporated substance and the gas, and then through the acceleration of the electric field, the vaporized Substances and their reaction products are deposited on the workpiece to form a thin film with a special function. PVD technology is the core technology of various industries such as semiconductor chip manufacturing, solar energy industry, and LCD manufacturing industry. The main methods include vacuum coating, arc plasma plating, ion coating, molecular beam epitaxy and sputtering coating, etc. [0003] Sputtering is one of the main me...
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