Semiconductor structure and forming method thereof
A semiconductor and sacrificial layer technology, which is applied in the field of semiconductor structure and its formation, can solve the problems such as the need to improve the performance of transistors
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[0040]As mentioned in the background, the performance of the fin field effect transistor with surrounding trench gate structure needs to be improved in the prior art. Now analyze and illustrate in conjunction with specific embodiment.
[0041] figure 1 It is a schematic cross-sectional structure diagram of a semiconductor structure.
[0042] Please refer to figure 1 , including: a substrate 100 with a fin structure on the substrate 100, the fin structure including a first nanowire 101 and a second nanowire 102 on the first nanowire 101; surrounding the first nanowire The gate structure of the wire 101 and the second nanowire 102, the gate structure includes a gate dielectric layer 103, a work function layer 104 on the gate dielectric layer 103, and a gate layer 105 on the work function layer 104; The side walls 106 on the side walls of the gate structure; the source-drain doped layer 107 located in the fins on both sides of the gate structure; the dielectric layer 108 locat...
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