TSV structure and TSV electroplating process

Abstract

The invention relates to the technical field of semiconductors, in particular to a TSV structure and a TSV electroplating process. The TSV structure comprises a silicon wafer, a through hole is formed in the silicon wafer, the through hole is filled with TSV metal in an electroplating mode, the exposed part of the TSV metal is flush with the upper surface and the lower surface of the silicon wafer, a passivation layer is deposited on the surface of the silicon wafer, seed layers are arranged on the passivation layer on the two sides of the silicon wafer, and the passivation layer is an insulating layer or an oxidation layer. According to the method, the seed layers are manufactured on the surfaces of the silicon wafer and the slide glass, then the silicon wafer and the slide glass are temporarily bonded together, the current is directly led to the bottom of the TSV blind hole by applying the current to the surface of the seed layer on the edge of the silicon wafer, and the purpose that electroplating starts from the bottom is achieved; only the passivation layer is arranged on the side wall of the silicon wafer in the area where the TSV blind hole is located and the opening area, a seed layer is not arranged, the problem that the opening is closed in the TSV metal electroplating process is solved, and electroplating of a deeper TSV hole can be realized by using larger current, so that the electroplating efficiency is improved.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, and more particularly to a TSV structure and a TSV electroplating process. Background technique [0002] The millimeter wave RF technology has developed rapidly in the semiconductor industry, and its high-speed data communication, automotive radar, airborne missile tracking system and space spectroscopy and imaging are widely used. It is expected that the 2018 market has reached 1.1 billion US dollars, which has become an emerging industry. New applications provide new requirements for the electrical performance, compact structure and system reliability of the product, need to integrate different chips including RF units, filters, and power amplifiers, etc. into a separate system to implement emission and reception signals. However, for wireless transmitting and receiving systems, it is currently not integrated to the same chip (SOC). [0003] The RF module needs to be used as a substra...

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Problems solved by technology

However, as the depth of TSV becomes larger and larger, it has exceeded the limit of the above-mentioned electroplating method. At present, the most advanced electroplating machine and electroplating chemical solution in the industry can no longer support solid filling with a depth of more than 200 μm, or even if the TSV opening is enlarged. , in order to prevent the opening from being closed in advance, it can only be electroplated with a small electroplating rate, and the production capacity is very limited

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