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Method for realizing irreversible pressure induced SP3 hybridization increase of graphene based on transition metal catalysis

A technology of transition metal catalysis and transition metal, applied in the direction of single-layer graphene, graphite, diamond, etc., can solve the problems of unclear influence on the performance of diamond devices, complex experimental equipment, high cost, etc., and achieve rapid Gr irreversible pressure-induced sp3 impurities The effect of increased chemical efficiency, simple preparation process, and shortened operation time

Active Publication Date: 2021-07-13
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] 2. Telephone sp 3 hybridization increase
In 2014, F. Zhang et al. used spark plasma sintering of Gr nanosheets under the action of pulsed direct current to discover the phenomenon of diamond phase transition, which also means that sp in Gr 3 increase in hybridization, but this phenomenon does not occur under an AC electric field
[0012] However, in these previous studies, there are still some problems, including: (1) in promoting sp 3 The pressure-induced phase transition with increased hybridization requires a higher applied pressure, generally >10GPa, and the phase transition can be restored after unloading; (2) irreversible sp 3 The region where the hybridization increase occurs is generally a double-layer or multi-layer Gr structure. Currently, the irreversible sp induced in the single-layer Gr region 3 The study of hybridization increase has not been reported yet; (3) The required experimental equipment is complex and costly, for example, diamond sample cells, pressure transmission media, spark plasma sintering systems, etc. are required; (4) sp 3 The hybridization increase region or the phase transition region is small, generally hundreds of square nanometers to several square micrometers
Although the fluorinated diamond phase transition of large-area Gr can be achieved by surface fluorination, the effect of surface fluorination on the performance of subsequent diamond devices is still unclear

Method used

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  • Method for realizing irreversible pressure induced SP3 hybridization increase of graphene based on transition metal catalysis
  • Method for realizing irreversible pressure induced SP3 hybridization increase of graphene based on transition metal catalysis
  • Method for realizing irreversible pressure induced SP3 hybridization increase of graphene based on transition metal catalysis

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Embodiment 1

[0069] A transition-metal-catalyzed Gr irreversible piezo-induced sp 3 A method for increasing hybridization, the method includes: using a transition metal substrate as a catalyst, using a patterned substrate with an indenter pattern as a pressure application device, to achieve rapid, large-area, uniform, low-cost, single-layer Gr irreversible compression sp 3 Hybridization increases.

Embodiment 2

[0071] A Gr irreversible piezo-induced sp based on transition metal catalysis according to Example 1 3 The method of hybridization increase, the difference is: use transition metal Cu (transition metal substrate) as catalyst, patterned sapphire substrate with hemispherical indenter pattern as pressure application device, patterned sapphire substrate and Cu / Gr The size is about 5mm×5mm. like Figure 5 As shown, the specific steps are as follows:

[0072] (1) Preparation: preparation of Cu / Gr heterojunction; refers to: growing Gr on Cu substrate by metal-organic chemical vapor deposition method.

[0073] (2) Cleaning: Select a patterned sapphire substrate with a hardness of 9 (such as metal, semiconductor, etc.) and a hemispherical indenter pattern, Image 6 It is a schematic diagram of a SEM photo of a patterned sapphire substrate; and the patterned sapphire substrate is cleaned; cleaning refers to: the patterned sapphire substrate is ultrasonically cleaned for 15 minutes by ...

Embodiment 3

[0086] According to a method for preparing GNM by imprinting a patterned substrate according to Embodiment 2, the difference is that:

[0087] Step (1) refers to: using PMMA to wet transfer Gr to the substrate to prepare the substrate / Gr.

[0088] In step (4), the embossing method includes punching and rolling.

[0089] The number of layers of Gr is single layer or multilayer.

[0090] Periodic raised patterns are prepared by wet etching or dry etching.

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Abstract

The invention relates to a method for realizing irreversible pressure induced SP3 hybridization increase of graphene based on transition metal catalysis. The method mainly comprises the following steps: preparation of transition metal / Gr, cleaning a patterned substrate, assembling the transition metal substrate / Gr and the patterned substrate, performing pressurizing and unloading, and representing Gr sp3 hybridization increase. Compared with an existing preparation method, by utilizing the patterned substrate with the pressure head pattern as a pressure applying device and combining the catalytic action of the transition metal substrate, the method can realize quick, large-area, uniform, low-cost and single-layer Gr inreversible pressesure induced sp3 hybridization increase.

Description

technical field [0001] The invention relates to a graphene irreversible pressure-induced sp based on transition metal catalysis 3 The method for increasing hybridization belongs to the technical field of semiconductor material preparation and processing. Background technique [0002] The different bonding methods between carbon atoms lead to different properties of the elemental substances to which they belong, such as the inclusion of sp in the layer 2 Graphite with hybrid covalent bonds and interlayer van der Waals forces versus only sp 3 In diamonds with hybrid covalent bonds, the different bonding methods lead to completely different properties even though both are composed of only carbon atoms. where sp 2 Hybridization refers to the mixing of the 2s orbital of the carbon atom and the two 2p orbitals to obtain three sps with equal energy and the same composition. 2 hybrid orbital. 3 sp 2 The hybrid orbitals are coplanar, and the angle between any two orbitals is 12...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/26C01B32/21
CPCC01B32/26C01B32/21C01B2204/02Y02E60/36
Inventor 刘铎贾冉赵超鹏韩素芹张汪阳高倩
Owner SHANDONG UNIV
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