Graphite thermal-field single crystal growth device for preparing silicon carbide crystals

A growth device, silicon carbide technology, applied in single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as large temperature gradients, achieve the effects of reducing defects, ensuring quality, and reducing radial temperature gradients

Pending Publication Date: 2021-07-16
NINGBO HIPER VACUUM TECH CO LTD
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, the heating resistors are generally located at the bottom and surroundings of the crucible, so that the crucible has a relatively good

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphite thermal-field single crystal growth device for preparing silicon carbide crystals
  • Graphite thermal-field single crystal growth device for preparing silicon carbide crystals
  • Graphite thermal-field single crystal growth device for preparing silicon carbide crystals

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0026] Embodiment one:

[0027] like figure 1 As shown, this embodiment provides a graphite thermal field single crystal growth device for preparing silicon carbide crystals, including a sealed cavity 9, a heating structure, a heat preservation structure 10, a temperature adjustment structure 12, a crucible 11 and a temperature measuring mechanism; The heat preservation structure 10 is arranged in the sealed cavity 9; the temperature adjustment structure 12 shown is arranged in the heat preservation structure 10, the heating structure is arranged in the heat preservation structure 10, and the temperature measuring mechanism is arranged in the sealed cavity 9 Above; the crucible 11 is set in the heat preservation structure 10 , and the seed crystal holder 112 is set in the crucible 11 .

[0028] In this specific embodiment, the sealed cavity 9 includes a cavity, an upper flange and a lower flange, the upper flange is arranged on the top of the cavity, and the lower flange is a...

Example Embodiment

[0037] Example 2:

[0038] This embodiment is an improved embodiment based on the first embodiment. It is mainly for other schemes given for the arrangement of electrodes, such as Figure 5 As shown, the arrangement of electrodes can be adjusted on the lower electrode 7 of the matching electrode of the lower main heating resistor 4. The lower electrode 7 can be arranged in such a way that the electrode passes through the cavity and is parallel to the lower flange, and the electrode and the cavity adopt a flange Sealed connection with O-ring.

[0039] In this embodiment, it needs to be explained that the growth device in the example adopts the method of lifting the upper flange cover of the cavity, so the upper electrode 5 cannot be arranged in parallel with the upper flange, and can only be arranged through the upper flange. The way of flange is carried out, helps feeding material and finished product to take out like this, reduces the number of disassembly times of upper el...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a graphite thermal-field single crystal growth device for preparing silicon carbide crystals, belonging to the technical field of silicon carbide single crystal preparation and crystal growth. The graphite thermal-field single crystal growth device comprises a sealing cavity, a heating structure, a heat preservation structure, a temperature adjusting structure, a crucible and a temperature measuring mechanism, wherein the heat preservation structure is arranged in the sealing cavity; the heating structure is arranged in the heat preservation structure; the temperature measuring mechanism is arranged on the sealing cavity; the temperature adjusting structure is arranged in the heat preservation structure, and a crucible and a seed crystal support are arranged in the heat preservation structure; the heating structure is used for heating the bottom and the top of the crucible and carrying out axial and radial temperature control on the crucible; the temperature measuring mechanism is used for respectively measuring the temperatures of the top and the bottom of the crucible; the heat preservation structure is used for carrying out heat preservation on a thermal field of the whole cavity, so heat loss of the crucible can be reduced, and accurate temperature control on each part of the crucible is realized; the temperature adjusting structure can reduce the radial temperature gradient of the crucible; and therefore, the radial temperature gradient and the stress gradient of the crystal in the growth process of the silicon carbide single crystal are reduced, the defects of crystal growth can be reduced, and the quality of the crystal is ensured.

Description

technical field [0001] The invention relates to the technical field of silicon carbide single crystal preparation and crystal growth, in particular to a graphite thermal field single crystal growth device for preparing silicon carbide crystals. Background technique [0002] Silicon carbide is a high-quality wide-bandgap semiconductor material, which has the advantages of wide bandgap, high breakdown electric field, high thermal conductivity, high saturation electron drift rate, etc., and can meet the needs of high temperature, high power, low loss and large diameter devices. Silicon carbide single crystals cannot be formed by the melting method, and the sublimation growth technology based on the improved Lely method - physical vapor transport method is a common method to obtain silicon carbide single crystals. The growth principle of silicon carbide single crystal prepared by PVT method is: high-purity silicon carbide powder source decomposes at high temperature to form gase...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B23/002C30B29/36
Inventor 刘鹏徐文立潘建栋袁晓芸
Owner NINGBO HIPER VACUUM TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap