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Target material assembly and processing method thereof

A processing method and target material technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as inability to effectively improve the quality of coating products, shedding, etc., to increase the adhesion surface area, reduce shedding, and apply wide-ranging effects

Active Publication Date: 2021-07-23
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The anti-falling treatment of this method is mainly aimed at the back plate area in the target assembly and the connection area between the back plate and the side of the target, and does not treat the sputtering surface of the target, and the edge of the sputtering surface of the target is closer to the crystal surface. The circular position is easy to fall off due to the accumulation of anti-sputtering, so that the quality of the coated product cannot be effectively improved

Method used

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  • Target material assembly and processing method thereof
  • Target material assembly and processing method thereof
  • Target material assembly and processing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] This embodiment provides a processing method for a target assembly, the processing method comprising the following steps:

[0057] (1) The titanium target 1 and the aluminum alloy back plate 2 are welded together and then machined. The target 1 is obtained by cutting and thermoplastically deforming the titanium ingot. The machining includes: machining the side of the target 1 to form Chamfering, so that the size of the sputtering surface of the target 1 is smaller than the size of the welding surface of the target 1, the side of the target 1 after the machining is an inclined plane, and the angle between the welding surface of the target 1 is 15 degrees, and the primary target is obtained material components;

[0058] (2) Carry out knurling treatment to the edge of the sputtering surface of the target 1 and part of the side area of ​​the target 1 in the primary target assembly obtained in step (1), and the knurled area of ​​the edge of the sputtering surface of the targ...

Embodiment 2

[0064] This embodiment provides a processing method for a target assembly, the processing method comprising the following steps:

[0065] (1) The titanium target 1 and the copper alloy back plate 2 are welded together and then machined. The target 1 is obtained by cutting and thermoplastically deforming the titanium ingot. The machining includes: machining the side of the target 1 to form Chamfering, so that the size of the sputtering surface of the target 1 is smaller than the size of the welding surface of the target 1, the side of the target 1 after machining is an inclined plane, and the angle between the welding surface of the target 1 is 35 degrees, and the primary target is obtained material components;

[0066] (2) Carry out knurling treatment to the edge of the sputtering surface of the target 1 and part of the side area of ​​the target 1 in the primary target assembly obtained in step (1), and the knurled area of ​​the edge of the sputtering surface of the target 1 ...

Embodiment 3

[0070] This embodiment provides a processing method for a target assembly, the processing method comprising the following steps:

[0071] (1) The aluminum target 1 and the aluminum alloy back plate 2 are welded together and then machined. The target 1 is obtained by cutting and thermoplastically deforming an aluminum ingot. The machining includes: machining the side of the target 1 to form Chamfering, so that the size of the sputtering surface of the target 1 is smaller than the size of the welding surface of the target 1, the side of the target 1 after machining is an inclined plane, and the angle with the welding surface of the target 1 is 45 degrees, and the primary target is obtained material components;

[0072] (2) Carry out knurling treatment to the edge of the sputtering surface of the target 1 and part of the side area of ​​the target 1 in the primary target assembly obtained in step (1), and the knurled area of ​​the edge of the sputtering surface of the target 1 Th...

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Abstract

The invention provides a target material assembly and a processing method thereof. The processing method comprises the following steps: combining a target material and a back plate, and then carrying out machining to obtain a primary target material assembly; and knurling the edge of the sputtering surface of the target material in the primary target material assembly and part of the side surface area of the target material, and carrying out sand blasting on the residual area of the side surface of the target material and part of the back plate area to obtain the target material assembly. According to the processing method disclosed by the invention, the edge of the sputtering surface of the target material and part of the side surface close to the sputtering surface are knurled, so that the adhesion capacity of the target material to anti-sputtering objects is enhanced, too much anti-sputtering objects are prevented from being accumulated by utilizing the structural characteristics of knurled patterns, the problem that when too much anti-sputtering objects are accumulated, the anti-sputtering objects are prone to falling off is effectively prevented, and the quality of a coated product is ensured; and according to the processing method, the improvement treatment operation on the target material assembly is simple, the effect is remarkable, the cost is low, and the application prospect is wide.

Description

technical field [0001] The invention belongs to the technical field of target preparation, and relates to a target component and a processing method thereof. Background technique [0002] Magnetron sputtering technology is currently one of the most commonly used technologies in industrial coating production. By controlling the particle bombardment of the target surface, the high-energy particles collide with the atoms on the target surface, so that the target atoms obtain enough energy to escape from the surface, and then Under the action of electric field force or magnetic field force, it is deposited on the surface of the substrate to complete the coating process. During the magnetron sputtering process, the sputtered target atoms will not only deposit on the substrate, but also deposit on other surfaces of the deposition chamber, including the non-sputtering area of ​​the target, forming anti-sputtering objects; due to the plasma atmosphere Atoms deposited on the non-spu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
CPCC23C14/35C23C14/3414C23C14/3407
Inventor 姚力军边逸军潘杰王学泽徐蔓
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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