Test method for coordination effect of displacement damage and total ionization dose of bipolar process electronic device
An electronic device and bipolar process technology, applied in the field of bipolar process electronic device displacement damage and ionization total dose synergy effect test, can solve the problem of MOS device displacement damage and ionization total dose synergy effect, displacement damage sensitivity, threatening electronic system reliability and other issues, to achieve the effect of saving test costs and time costs
An electronic device and bipolar process technology, applied in the field of bipolar process electronic device displacement damage and ionization total dose synergy effect test, can solve the problem of MOS device displacement damage and ionization total dose synergy effect, displacement damage sensitivity, threatening electronic system reliability and other issues, to achieve the effect of saving test costs and time costs
CN113156291AActive Publication Date: 2021-07-23NORTHWEST INST OF NUCLEAR TECH
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[0042] Reactor neutrons and 60 The Ξ³-rays from the Co source are representative radiation environments for studying the effect of displacement damage and the effect of total ionizing dose, respectively. The neutron radiation environment mainly produces displacement damage, 60 Co isotope gamma radiation sources are mainly used to produce the total dose effect of ionizing radiation.
[0043] Neutron radiation will cause the displacement effect of lattice atoms in semiconductor materials, form defects and defect groups, and introduce a large number of defect energy levels in the forbidden band of semiconductor materials. These deep-level defects increase the carrier recombination centers, thereby causing a decrease in the minority carrier lifetime of electronic devices in bipolar processes, resulting in severe degradation of electrical performance, while neutron-induced ionizing radiation damage is negligible. The main mechanism of the total dose effect of ionizing radiation on el...
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In order to highlight the characteristics of the coordination effect of the displacement damage and the total ionization dose of the bipolar process electronic device, the invention provides a test method for the coordination effect of the displacement damage and the total ionization dose of the bipolar process electronic device, which comprises the following steps of: firstly, irradiating the bipolar process electronic device by using gamma rays; in the irradiation process, a corresponding device adopting one of a variable-temperature irradiation mode and a constant-high-temperature irradiation mode, and performing irradiation until the required ionization total dose level is reached; and then irradiating the irradiated electronic device to a specified value by using reactor neutrons, whererin in the irradiation process, no bias is applied to the device and pins are in short-circuiting; and after neutron irradiation, testing the electrical parameters of the device after the amount of the surface active agent of the device is reduced to a safety threshold. According to the method, the combined action of oxide trapped charges, interface traps and displacement damage defects can be emphasized, so that conservative evaluation of the displacement damage and ionization total dose coordination effect of the bipolar process electronic device in a complex radiation environment is realized.
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technical field [0001] The invention relates to a worst test method for evaluating the synergistic effect of displacement damage and total ionization dose on bipolar process electronic devices. Background technique [0002] With the continuous development of space technology, more and more electronic devices have been applied in the space radiation environment. In the space environment, due to the influence of the earth's radiation belt, solar wind and cosmic rays, the cumulative ionized total dose will be formed in the electronic devices and systems. effect and displacement damage effect. These radiation damages will seriously threaten the performance of electronic devices and systems, resulting in reduced lifespan or even damage to spacecraft in orbit. According to statistics, the failures caused by space radiation can reach about 40% of the on-orbit failures of spacecraft, so the ground evaluation test for radiation damage is of great significance for predicting the radi...
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Patent Timeline
23 Jul 2021
Publication
CN113156291A
- IPC
- G01R31/26
- CPC
- G01R31/2642
- Inventors
- ε岩; ιδΌ