Test method for coordination effect of displacement damage and total ionization dose of bipolar process electronic device

Abstract

In order to highlight the characteristics of the coordination effect of the displacement damage and the total ionization dose of the bipolar process electronic device, the invention provides a test method for the coordination effect of the displacement damage and the total ionization dose of the bipolar process electronic device, which comprises the following steps of: firstly, irradiating the bipolar process electronic device by using gamma rays; in the irradiation process, a corresponding device adopting one of a variable-temperature irradiation mode and a constant-high-temperature irradiation mode, and performing irradiation until the required ionization total dose level is reached; and then irradiating the irradiated electronic device to a specified value by using reactor neutrons, whererin in the irradiation process, no bias is applied to the device and pins are in short-circuiting; and after neutron irradiation, testing the electrical parameters of the device after the amount of the surface active agent of the device is reduced to a safety threshold. According to the method, the combined action of oxide trapped charges, interface traps and displacement damage defects can be emphasized, so that conservative evaluation of the displacement damage and ionization total dose coordination effect of the bipolar process electronic device in a complex radiation environment is realized.

Description

technical field [0001] The invention relates to a worst test method for evaluating the synergistic effect of displacement damage and total ionization dose on bipolar process electronic devices. Background technique [0002] With the continuous development of space technology, more and more electronic devices have been applied in the space radiation environment. In the space environment, due to the influence of the earth's radiation belt, solar wind and cosmic rays, the cumulative ionized total dose will be formed in the electronic devices and systems. effect and displacement damage effect. These radiation damages will seriously threaten the performance of electronic devices and systems, resulting in reduced lifespan or even damage to spacecraft in orbit. According to statistics, the failures caused by space radiation can reach about 40% of the on-orbit failures of spacecraft, so the ground evaluation test for radiation damage is of great significance for predicting the radi...

AI Technical Summary

Problems solved by technology

But in fact, electronic devices working in a radiation environment for a long time will be affected by both displacement damage and the total dose effect of ionizing radiation

In recent years, with the deepening of research work, it has been found that there is an interaction between these two different types of radiation effects, and the parameter degradation caused by the synergistic effect of displacement damage and total ionizing dose can even be aggravated to the sum of single radiation degradation. times, leading to strong unexpected failures, which will seriously threaten the reliability of electronic systems

The main process types of silicon-based electronic devices include MOS process and bipolar process. Among them, MOS process devices are mainly sensitive to the total dose effect of ionization, and the effect of displacement damage on MOS devices is weak. Therefore, the displacement damage and ionization of MOS devices are generally not considered. The total dose synergy effect; bipolar process electronic devices are sensitive to both the ionization total dose effect and the displacement damage. In recent years, relevant research at home and abroad has shown that bipolar process devices are more likely to suffer from both displacement damage and ionization total dose effect. non-linear coupling phenomenon

Synergistic effects of displacement damage and total dose in bipolar devices are oxide trap charges, Si / SiO 2 The comprehensive influence of interface traps and bulk silicon displacement damage defects on the carrier recombination process may be closely related to the structure and bias conditions of the transistor, and the mechanism of action is very complicated

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