Electrical measurement-type surface plasmon resonance sensor, electrical measurement-type surface plasmon resonance sensor chip, and method for detecting change in surface plasmon resonance
A surface plasmon and resonant sensor technology, applied in electrical components, semiconductor devices, instruments, etc., can solve problems such as difficulty in improving sensor sensitivity and impact on sensor accuracy, and achieve high production, easy quantification, and high sensor sensitivity.
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Embodiment 1
[0142] First, an ITO substrate (glass substrate: S-TIH11, glass substrate thickness: 1.1mm, area: 19.6×19.6mm, ITO Film: highly durable transparent conductive film 5Ω, made by Geomatec Co., Ltd.), a film (silicon film, resistance value <50Ω, thickness: 100nm, dopant: phosphorus, Kyodo International Co., Ltd.) substrate. Next, using a sputtering device (QAM-4, manufactured by ULVAC Co., Ltd.), Au (99.99%, manufactured by High Purity Chemical Research Institute, Inc.) was used as a target to form a film made of Au with a thickness of 50 nm on the silicon film ( Au film) to obtain a chip (photoelectric conversion part (sensor chip)) in which a glass substrate, an ITO film, a silicon film, and an Au film are sequentially laminated.
[0143]Next, diiodomethane (first grade, manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) was coated on the surface of the above-mentioned glass substrate of the obtained chip opposite to the ITO film, and a rectangular prism (S-TIH11, ma...
Embodiment 2
[0160] Instead of the above TiO 2 , using undoped silicon (99.999% Si, manufactured by High Purity Chemical Research Institute Co., Ltd.) as a target, a film (undoped silicon film) made of pure silicon with a thickness of 200 nm was formed on the above-mentioned ITO film, and in addition In the same manner as in Comparative Example 1, a chip (a chip with a prism) in which a prism, diiodomethane, a glass substrate, an ITO film, an undoped silicon film, and an Au film were sequentially laminated was obtained.
[0161] Except for using the chip with a prism obtained in Example 2 instead of the chip with a prism obtained in Example 1, the ITO film-Au film (plasmon resonance film electrode) gap was measured in the same manner as in Test Example 1. The current value (Current(μA)). The results obtained are shown in Figure 16 . should be explained, Figure 16 In , the ratio (Ratio of Current (%)) of each current value to the maximum value of the measured current value is shown as...
Embodiment 3
[0164] First, prepare the same ITO substrate as in Example 1, use the above-mentioned sputtering device, use n-type silicon (99.999% Si (N-type P-doped), resistance value 50-500Ω·cm, manufactured by High Purity Chemical Research Institute Co., Ltd. ) as a target, a film (silicon film) made of Si with a thickness of 100 nm was formed on the above-mentioned ITO substrate. Next, Ti (99.99%, manufactured by Toyoshima Seisakusho Co., Ltd.) was used to form a 10-nm-thick film (Ti film) made of Ti on the silicon film. Next, using the above-mentioned sputtering apparatus, using Au (99.99%, manufactured by High Purity Chemical Research Institute Co., Ltd.) as a target, a film (Au film) made of Au with a thickness of 50 nm was formed on the above-mentioned Ti film to obtain a glass layer laminated in sequence. Substrate, ITO film, silicon film, Ti film, Au film chip (photoelectric conversion part (sensor chip)).
[0165] Next, diiodomethane (first grade, manufactured by Fujifilm Wako P...
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