Carbon-ceramic composite material crucible containing Si3N4 and BN composite coating and preparation method of carbon-ceramic composite material crucible

A carbon-ceramic composite material and composite coating technology, which is applied in chemical instruments and methods, polycrystalline material growth, self-melting liquid pulling method, etc., can solve the problems of poor wettability, reduce the frequency of replacement, etc., and achieve dense coating , enhance life, good strength effect

Active Publication Date: 2021-08-03
HUNAN SHIXIN NEW MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the technical problems existing in the use of quartz crucibles and carbon-carbon crucibles in the existing single crystal silicon production process, the object of the present invention is to provide a Si-containing 3 N 4 A carbon-ceramic composite material crucible with BN composite coating and a preparation method thereof, using the carbon-ceramic crucible as a substrate, depositing Si on its pores and surfaces (inner and outer surfaces) 3 N 4 coating, and then deposited a BN coating, the present invention only needs to use a single crucible to produce single crystal sil

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0031] Example 1

[0032] (1) Acupuncture prefabrication: acupuncture preparation density is 0.58 ± 0.02g / cm 3 Carbon fiber crucible prefabrication;

[0033] (2) Prefabricated heat treatment: High temperature heat treatment of carbon fiber crucible at 2000 ° C argon protective atmosphere, density change to 0.56 ± 0.02 g / cm 3 ;

[0034] (3) Precast encryption: 0.56 ± 0.02g / cm of the density 3 The carbon fiber crucible prefabricates are entered into 1: 1 of 1 ± 0.2 kPa by 1 ± 0.2 kPa to 1.45 g / cm. 3 Get carbon carbon crucible;

[0035] (4) Carbon carbon heat treatment: heat the carbon carbon crucible at 2300 ° C for 3 h, resulting in a carbon carbon crucible matrix;

[0036] (5) High-temperature silicon: Place the carbon crucible substrate above the silicon powder, and then the silicon-based induced silicon is obtained at 1900 ° C, and the stove is less than 1000 Pa to obtain a carbon pottery matrix;

[0037] (6) Si 3 N 4 Coating deposition process: n 2 Under atmosphere, HSI...

Example Embodiment

[0044] Example 2

[0045] (1) Acupuncture prefabrication: acupuncture preparation density is 0.58 ± 0.02g / cm 3 Carbon fiber crucible prefabrication;

[0046] (2) Prefabricated heat treatment: High temperature heat treatment of carbon fiber crucible at 2000 ° C argon protective atmosphere, density change to 0.56 ± 0.02 g / cm 3 ;

[0047] (3) Precast encryption: 0.56 ± 0.02g / cm of the density 3 The carbon fiber crucible prefabricate is accessed from 1: 1 of 1: 1 in 1: 1 kPa, 1: 1, to 1.44 g / cm. 3 Get carbon carbon crucible;

[0048] (4) Carbon carbon heat treatment: heat the carbon carbon crucible at 2300 ° C for 3 h, resulting in a carbon carbon crucible matrix;

[0049] (5) High-temperature silicon: Place the carbon crucible substrate above the silicon powder, and then the silicon-based induced silicon is obtained at 1900 ° C, and the stove is less than 1000 Pa to obtain a carbon pottery matrix;

[0050] (6) Si 3 N 4 Coating deposition process: n 2 Under atmosphere, at 700 ...

Example Embodiment

[0058] Example 3

[0059] (1) Acupuncture prefabrication: acupuncture preparation density is 0.58 ± 0.02g / cm 3 Carbon fiber crucible prefabrication;

[0060] (2) Prefabricated heat treatment: High temperature heat treatment of carbon fiber crucible at 2000 ° C argon protective atmosphere, density change to 0.56 ± 0.02 g / cm 3 ;

[0061] (3) Precast encryption: 0.56 ± 0.02g / cm of the density 3 The carbon fiber crucible prefabricates are entered into 1.46 g / cm in 980 ± 5 ° C, 1 kPa of the furnace pressure. 3 Get carbon carbon crucible;

[0062] (4) Carbon carbon heat treatment: heat the carbon carbon crucible at 2300 ° C for 3 h, resulting in a carbon carbon crucible matrix;

[0063] (5) High-temperature silicon: Place the carbon crucible substrate above the silicon powder, and then the silicon-based induced silicon is obtained at 1900 ° C, and the stove is less than 1000 Pa to obtain a carbon pottery matrix;

[0064] (6) Si 3 N 4 Coating deposition process: n 2 Under atmosph...

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Abstract

The invention discloses a carbon-ceramic composite material crucible containing a Si3N4 and BN composite coating and a preparation method of the carbon-ceramic composite material crucible. The carbon-ceramic composite material crucible is prepared by sequentially depositing an Si3N4 coating and a BN coating on a carbon-ceramic crucible substrate. According to the invention, a carbon-ceramic crucible is used as a substrate, the Si3N4 coating is deposited on the pores and the surfaces (the inner surface and the outer surface) of the carbon-ceramic crucible, and then the BN coating is deposited. According to the invention, monocrystalline silicon is produced only by adopting a single crucible, and the high-temperature stability and the silicon corrosion resistance of the crucible are greatly improved through the synergistic effect of the carbon-ceramic crucible substrate, the Si3N4 coating and the BN coating; and meanwhile, the wettability of the surface of the crucible to silicon is poor, so that the problem that silicon crystal is adhered to the crucible and is difficult to clean after monocrystalline silicon production is avoided, the service life of the crucible is prolonged, the replacement frequency of the crucible is reduced, and the production efficiency of monocrystalline silicon is improved.

Description

technical field [0001] The invention belongs to the technical field of thermal field tooling / components for single crystal silicon drawing furnaces, and in particular relates to a Si-containing 3 N 4 A carbon-ceramic composite crucible with BN composite coating and a preparation method thereof. Background technique [0002] At present, the most widely used method in the production of monocrystalline silicon is the Czochralski method: that is, the monocrystalline silicon rod is drawn in a monocrystalline silicon furnace, and the quartz crucible containing polycrystalline silicon is placed in a carbon-carbon composite material crucible. However, when this method is used for production, the temperature in the monocrystalline silicon furnace is as high as 1500°C, and the quartz crucible containing polycrystalline silicon will soften at this temperature, and it often needs to be replaced after 400-500 hours of use. It is often firmly stuck to the carbon-carbon composite materia...

Claims

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Application Information

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IPC IPC(8): C04B41/89C04B35/573C04B35/622C30B29/06C30B15/10
CPCC04B41/89C04B41/52C04B35/573C04B35/622C30B29/06C30B15/10C04B2235/77C04B2235/96C04B2235/5248C04B2235/614C04B2235/428C04B41/5066C04B41/4531C04B41/5064
Inventor 陈振宇朱苏华周娩红
Owner HUNAN SHIXIN NEW MATERIALS CO LTD
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