Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

213nm laser

A 213nm laser technology, applied in the field of lasers, can solve the problems of low output repetition frequency of ArF excimer lasers, unfavorable improvement of processing resolution, high equipment operation and maintenance costs, etc., to improve damage risk, good spot space quality, and absorption small effect

Active Publication Date: 2021-08-13
RAINBOW SOURCE LASER RSLASER
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the working medium of excimer laser is toxic gas, which will pollute the environment and endanger personal safety, and the equipment operation and maintenance costs are high
At the same time, the output repetition frequency of the ArF excimer laser is low, which is not conducive to improving the processing efficiency. The output beam quality is poor and the line width is large, which is not conducive to improving the processing resolution.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • 213nm laser
  • 213nm laser
  • 213nm laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0050] It should be understood that when used in this specification and the appended claims, the terms "comprising" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude one or Presence or addition of multiple other features, integers, steps, operations, elements, components and / or collections thereof.

[0051] It should also be further understood that the term "and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a 213nm laser. The 213nm laser comprises a 1064nm laser, a frequency doubling crystal, a frequency quadruplicating crystal and a frequency quintupling crystal, wherein the 1064nm laser, the frequency doubling crystal, the frequency quadruplicating crystal and the frequency quintupling crystal are connected in sequence; the 1064nm laser is used for generating a 1064nm laser pulse; the frequency doubling crystal receives 1064nm laser pulses emitted by the 1064nm laser and is used for converting part of 1064nm laser into 532nm frequency doubling light; the frequency quadruplicating crystal is used for converting the 532nm frequency doubled light into 266nm laser pulse; and the frequency quintupling crystal is used for converting the 1064nm laser and the 266nm laser pulse into the 213nm laser. The 213nm laser can avoid the problem that polarization needs to be converted in the process of generating 213nm laser pulses by performing sum frequency on the frequency doubled light and the frequency tripled light.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to a 213nm laser. Background technique [0002] Ultraviolet wavelength light sources are widely used in the manufacture of semiconductor integrated circuits, and the shorter the wavelength of the light source, the higher the integration level of integrated circuits that can be supported. As the integration of semiconductor chips becomes higher and higher, the characteristic line width of plate making becomes thinner and thinner, and the wavelength of the photolithography light source required becomes shorter and shorter. [0003] At present, ArF excimer lasers are mainly used as photolithography light sources in industrial production, although ArF excimer lasers can output a deep ultraviolet wavelength of 193nm. However, the working medium of the excimer laser is toxic gas, which will pollute the environment, endanger personal safety, and have high equipment operation and maintenanc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S3/109H01S3/00
CPCH01S3/0071H01S3/109
Inventor 王家赞江锐储玉喜张旭东沙鹏飞范元媛
Owner RAINBOW SOURCE LASER RSLASER
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products