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Perovskite solar cell containing modification layer structure and preparation method thereof

A solar cell and modification layer technology, applied in the field of solar cells, can solve problems such as poor contact performance, degradation of photovoltaic device performance, and prone to holes, so as to improve charge extraction efficiency, facilitate large-area film formation, and promote interface contact Effect

Pending Publication Date: 2021-08-17
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the titanic acid surface has poor contact performance with perovskite, and the charge extraction ability is weak. The film quality of perovskite on the surface of the electron transport layer is poor, the film is uneven and prone to holes, resulting in low device performance, especially in large In area photovoltaic devices, as the film area increases, the non-uniformity problem will become more serious, and the probability of holes will increase greatly, and its charge extraction ability will be weak, which will lead to a serious decline in the performance of photovoltaic devices

Method used

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  • Perovskite solar cell containing modification layer structure and preparation method thereof
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preparation example Construction

[0052] One aspect of the present invention provides a method for preparing a perovskite solar cell containing a modified layer structure, comprising the following steps:

[0053] S1: cleaning conductive glass;

[0054] S2: An electron transport layer is formed on the conductive glass, and the material of the electron transport layer is ZnTiO 3 ;

[0055] S3: prepare the modification layer precursor solution, dissolve the zinc salt in the solvent, add sulfur-containing material, stir and filter to obtain the modification layer precursor solution;

[0056] S4: Prepare a modified layer, atomize and spray the modified layer precursor solution obtained in step S3 on the surface of the electron transport layer substrate, keep warm, and cool to obtain a modified layer;

[0057] S5: forming a perovskite light-absorbing layer on the modified layer;

[0058] S6: forming a hole transport layer on the perovskite light absorbing layer;

[0059] S7: forming a back electrode on the hole ...

Embodiment 1

[0071] S1: Clean the conductive glass, use deionized water, acetone, and ethanol to ultrasonically clean the FTO conductive glass, 20 minutes each time.

[0072] S2: preparing the electron transport layer precursor solution, dissolving 0.01 mol / L titanium acetylacetonate and 0.01 mol / L zinc acetylacetonate in ethanol to obtain the electron transport layer precursor solution.

[0073] S3: Prepare the modification layer precursor solution, dissolve zinc acetate in ethanol at a concentration of 0.001mol / L; then add 0.0015mol / L ethanolamine and 0.0005mol / L thiourea, continue stirring until completely dissolved, and filter to obtain the modification layer precursor liquid.

[0074] S4: Spray the electron transport layer, heat the conductive glass to 450°C, atomize and spray the electron transport layer precursor liquid prepared in step S2 on the surface of the conductive glass, the amount of the sprayed precursor liquid is 20mL, and the liquid flow rate is 10mL / min, end Afterwards...

Embodiment 2

[0080] S1: Etching the conductive glass, etching the P1 track on the conductive glass.

[0081] S2: Clean the conductive glass, use deionized water, acetone, and ethanol to ultrasonically clean the FTO conductive glass, 20 minutes each time.

[0082] S3: preparing the electron transport layer precursor solution, dissolving 0.01 mol / L titanium acetylacetonate and 0.01 mol / L zinc acetylacetonate in ethanol to obtain the electron transport layer precursor solution.

[0083] S4: Prepare the modification layer precursor solution, dissolve zinc acetate in ethanol at a concentration of 0.001mol / L; then add 0.0015mol / L ethanolamine and 0.0005mol / L thiourea, continue stirring until completely dissolved, filter to obtain the modification layer precursor liquid.

[0084] S5: Spray the electron transport layer, heat the conductive glass to 450°C, atomize and spray the electron transport layer precursor solution prepared in step S3 on the surface of the conductive glass, the amount of the...

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Abstract

The invention provides a perovskite solar cell containing a modification layer structure and a preparation method of the perovskite solar cell. The perovskite solar cell containing the modification layer structure comprises a conductive substrate, an electron transport layer, a modification layer, a perovskite light absorption layer, a hole transport layer and a back electrode layer which are stacked in sequence; the modification layer is located between the electron transport layer and the perovskite light absorption layer; the modification layer is made of S-doped ZnO; the material of the electron transport layer is ZnTiO3. The modification layer obtained by the preparation method can be well combined with a zinc titanate (ZnTiO3) electron transport layer, and S-doped ZnO is adopted to modify the zinc titanate electron transport layer, so that the charge extraction capability of the zinc titanate electron transport layer can be effectively improved, and the device efficiency is further effectively improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a perovskite solar cell with a modified layer structure and a preparation method thereof. Background technique [0002] Perovskite solar cells have attracted extensive attention from the academic community due to their low cost, high efficiency, and excellent performance. As a new electron transport layer material, zinc titanate has the advantages of low cost, high electron mobility, and good photostability and chemical stability. However, the titanic acid surface has poor contact performance with perovskite, and the charge extraction ability is weak. The film quality of perovskite on the surface of the electron transport layer is poor, the film is uneven and prone to holes, resulting in low device performance, especially in large In area photovoltaic devices, as the film area increases, the non-uniformity problem will become more serious, and the probability of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K30/152Y02E10/549
Inventor 尹君何瑞钦聂思晴李静郑南峰
Owner XIAMEN UNIV
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