Supercharge Your Innovation With Domain-Expert AI Agents!

Micro ultraviolet light-emitting diode chip for ultraviolet communication

A light-emitting diode and communication technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of the optical power and external quantum efficiency of the device, improve the frequency response performance of the device, promote hole injection, and increase the hole concentration. Effect

Active Publication Date: 2021-09-03
HEBEI UNIV OF TECH +1
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Micro LED devices can effectively improve the current spreading effect, reduce the junction temperature and increase the light extraction rate; although the advantages are significant, one of the main problems that needs to be solved urgently is the Shockley caused by sidewall defects in smaller-sized Micro LED devices. - Read-Hall (SRH) non-radiative recombination can have a severe impact on the optical power and external quantum efficiency (EQE) of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro ultraviolet light-emitting diode chip for ultraviolet communication
  • Micro ultraviolet light-emitting diode chip for ultraviolet communication
  • Micro ultraviolet light-emitting diode chip for ultraviolet communication

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062]The micro ultraviolet light-emitting diode oriented to ultraviolet communication in this embodiment sequentially includes: a substrate 101, a buffer layer 102, and an n-type electron injection layer 103 along the epitaxial growth direction; the n-type electron injection layer 103 has a two-level stepped structure, The first step is the exposed part; the non-exposed part, that is, the second step of the n-type electron injection layer 103 is the multi-quantum well layer 105, the p-type electron blocking layer 106, and the first p-type hole along the epitaxial growth direction. Injection layer 107; the first p-type hole injection layer 107 is another two-level stepped structure, and the second-level step along the epitaxial growth direction is followed by a p-type hole acceleration layer 108, a second p-type hole Injection layer 109, p-type heavily doped hole injection layer 110, current spreading layer 111; p-type ohmic electrode 112 is arranged on the current spreading la...

Embodiment 2

[0081] The micro ultraviolet light-emitting diode oriented to ultraviolet communication in this embodiment sequentially includes: a substrate 101, a buffer layer 102, and an n-type electron injection layer 103 along the epitaxial growth direction; the n-type electron injection layer 103 has a two-level stepped structure, The first step is the exposed part; the non-exposed part, that is, the second step of the n-type electron injection layer 103 is the multi-quantum well layer 105, the p-type electron blocking layer 106, and the first p-type hole along the epitaxial growth direction. Injection layer 107; the first p-type hole injection layer 107 is another two-level stepped structure, and the second-level step along the epitaxial growth direction is followed by a p-type hole acceleration layer 108, a second p-type hole Injection layer 109, p-type heavily doped hole injection layer 110, current spreading layer 111; p-type ohmic electrode 112 is arranged on the current spreading l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a Micro ultraviolet light emitting diode chip for ultraviolet communication. The diode chip sequentially comprises a substrate, a buffer layer and an n-type electron injection layer in the epitaxial growth direction, the n-type electron injection layer is of a two-stage step structure, and the second-stage step sequentially comprises a multi-quantum well layer, a p-type electron blocking layer and a first p-type hole injection layer in the epitaxial growth direction; the first p-type hole injection layer is of another two-stage step structure, and a p-type hole acceleration layer, a second p-type hole injection layer, a p-type heavily doped hole injection layer and a current expansion layer are sequentially arranged on a second stage step of the first p-type hole injection layer along the epitaxial growth direction; the current expansion layer is provided with a p-type ohmic electrode, and the exposed part of the n-type electron injection layer is provided with an n-type ohmic electrode. The light efficiency and the response speed of the device are improved, and the requirement of high-speed data transmission is met.

Description

technical field [0001] The invention relates to the technical field of Micro LED lighting, and in particular relates to a Micro ultraviolet light-emitting diode chip for ultraviolet communication and a preparation method thereof. Background technique [0002] Compared with traditional light sources, light-emitting diodes have the advantages of low energy consumption, small size, long service life, wide display color gamut, and environmental protection. At present, it is widely used in lighting, display, medicine, military, biochemical detection and other fields. With the gradual shrinking of the size of LED devices, Micro LED, as a new generation of display technology, is receiving extensive attention and research. Compared with LCD (liquid crystal display) and OLED (organic light-emitting diode) technologies currently used in the display field, Micro LED has the advantages of high photoelectric conversion efficiency, lower energy consumption, and fast response speed, and M...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/14H01L33/20H01L33/00
CPCH01L33/14H01L33/20H01L33/007
Inventor 张紫辉车佳漭李青张勇辉楚春双郑权
Owner HEBEI UNIV OF TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More