Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Band-gap reference circuit and low-offset high-power-supply-rejection-ratio band-gap reference source

A reference circuit and reference technology, applied in the direction of regulating electrical variables, control/regulating systems, instruments, etc., can solve the problems affecting the accuracy of the reference voltage, the accuracy of the mirror current, and the accuracy of the reference, and achieve the increase and decrease of the power supply rejection ratio. Small channel modulation effect, reducing circuit mismatch effect

Active Publication Date: 2021-09-07
CHENGDU SINO MICROELECTRONICS TECH CO LTD
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The implementation of the above two bandgap reference design techniques still has the following problems: 1) The offset voltage in the op amp clamp will affect the accuracy of the reference
2) MOS tube clamping, due to the existence of the channel modulation effect, indirectly affects the accuracy of the mirror current, which in turn affects the accuracy of the reference voltage
3) The same structure cannot work in a wide power supply voltage range, and the power supply rejection ratio is poor, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Band-gap reference circuit and low-offset high-power-supply-rejection-ratio band-gap reference source
  • Band-gap reference circuit and low-offset high-power-supply-rejection-ratio band-gap reference source
  • Band-gap reference circuit and low-offset high-power-supply-rejection-ratio band-gap reference source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] see Figure 4 , the embodiment provides a bandgap reference circuit, comprising:

[0062] The sixteenth MOS transistor M16, the gate terminal of which is connected to the fifth reference point E, the current input terminal is connected to the high level VDD, and the current output terminal is connected to the current input terminal of the seventeenth MOS transistor M17;

[0063] The seventeenth MOS transistor M17, the gate terminal of which is connected to the fourth reference point D, and the current output terminal is connected to the reference output terminal VREF;

[0064] The third triode Q3, its current input terminal is connected to the reference output terminal VREF, the current output terminal is grounded, the base is connected to the sixth reference point F, and the base is connected to the current input terminal through a capacitor;

[0065] The second triode Q2, its current input terminal is connected to the reference output terminal VREF through the second...

Embodiment 2

[0068] Example 2: see Figure 4 .

[0069] This embodiment provides a bandgap reference source with low offset and high power supply rejection ratio, including a bandgap reference circuit, a bias circuit, a start-up circuit and a current comparator;

[0070] The bandgap reference circuit adopts the bandgap reference circuit described in Embodiment 1.

[0071] The bias circuit includes:

[0072] No. 0 MOS tube M0, its current input terminal (source terminal) is connected to high level VDD, and the gate terminal is connected to the fourth reference point D;

[0073] The first MOS transistor M1, its current input terminal (source terminal) is connected to the current output terminal (drain terminal) of the zero MOS transistor M0, and the gate terminal is connected to the fourth reference point D;

[0074] The second MOS transistor M3, its current input terminal (source terminal) is connected to a high level, and the gate terminal is connected to the fifth reference point;

[...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a band-gap reference circuit and a low-offset high-power-supply-rejection-ratio band-gap reference source, and relates to the integrated circuit technology. The band-gap reference circuit comprises a sixteenth MOS tube, wherein the grid end of the sixteenth MOS tube is connected with a fifth reference point, the current input end of the sixteenth MOS tube is connected with a high level, and the current output end of the sixteenth MOS tube is connected with the current input end of a seventeenth MOS tube; the the seventeenth MOS tube the gate end which is connected with a fourth reference point, and the current output end of which is connected with the reference output end; a third triode a current input end of which is connected with the reference output end, a current output end of which is grounded, a base electrode of which is connected with a sixth reference point, wherein the base electrode is connected with the current input end through a capacitor; a second triode the current input end of which is connected with the reference output end through a second resistor, the base of which is connected with the current input end as a seventh reference point, and the current output end of which is grounded; a first triode the current input end of which is connected with the sixth reference point, the base of which is connected with the seventh reference point, and the current output end of which is grounded through the first resistor. The circuit can work in a wide power supply range, and has a very high power supply rejection ratio.

Description

technical field [0001] The present invention relates to integrated circuit technology. Background technique [0002] The bandgap reference source is the core module of the analog system and is widely used in integrated circuits such as A / D, D / A converters, and power chips. The design of a reference source with low temperature coefficient, low power consumption, and high power supply rejection ratio is very critical. . However, in practical applications, the performance of the bandgap reference is affected by the offset voltage of the operational amplifier, channel length modulation effect, noise characteristics, power supply voltage, etc.; to achieve better performance of the integrated circuit, the bandgap reference circuit is proposed. high demands. [0003] The basic principle of the bandgap reference is as image 3 As shown, it is the base-emitter voltage difference (△V BE ) and a base-emitter voltage with a negative temperature coefficient (V BE ) are added in a cer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G05F1/56
CPCG05F1/56
Inventor 乔仕超刘鑫武鹏杨平牛义廖志凯齐旭
Owner CHENGDU SINO MICROELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products