Bismuth electroplating solution and method for preparing bismuth film through electroplating
An electroplating solution and thin film technology, applied in circuits, semiconductor devices, etc., can solve problems such as strong cyanide toxicity, and achieve the effects of strong electrical conductivity, good binding force, high dispersion and covering ability
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[0018] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.
[0019] In present embodiment example 1, use above-mentioned electroplating solution to plate bismuth thin film to comprise the following steps
[0020] Preparation of electroplating solution; preparation of bismuth plating electroplating solution includes the following reagent components: potassium hydroxide or potassium nitrate or potassium chloride 0.5mol / L, nitric acid 2.0mol / L, glycerin 1.5mol / L, L-tartaric acid 0.8mol / L, Bismuth nitrate pentahydrate is 0.3mol / L, and the rest is deionized water.
[0021] Plating preparation process
[0022] Prepare the cathode seed layer: after depositing 5nm Ti on the silicon wafer, continue to deposit 80nm Au to prepare the el...
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