Semiconductor laser integrated chip and preparation method thereof

Abstract

The invention discloses a semiconductor laser integrated chip and a preparation method thereof. The integrated chip comprises a laser emitting unit and a laser detection unit; the integrated chip further comprises a common epitaxial structure; a first dielectric structure and a discrete epitaxial structure which are located on one side of the common epitaxial structure, wherein the discrete epitaxial structure comprises a first discrete epitaxial structure and a second discrete epitaxial structure; the laser emitting unit comprises a common epitaxial structure, a first discrete epitaxial structure, a first discrete electrode and a common electrode; the laser detection unit comprises a common epitaxial structure, a second discrete epitaxial structure, a second discrete electrode and a common electrode; the laser emitting unit has a first cavity length, the laser detection unit has a second cavity length, the first medium structure has a third cavity length, and the cavity length of the semiconductor laser integrated chip is the sum of the first cavity length, the third cavity length and the second cavity length. The technical problems that the length of a laser cavity is difficult to cleave, the yield is low, the output power is unstable, and the use scene and the use range of the laser are affected are solved.

Description

Technical field [0001] Embodiments of the present invention relate to the field of semiconductor optoelectronic technology, and more particularly to a semiconductor laser integrated chip and a preparation method thereof. Background technique [0002] The semiconductor laser is also known as laser diode, is a semiconductor material such as gallium GaAs (GaAs), phosphide (INP), gallium nitride (GaS), aluminum nitride (AlN), cadmium sulfide (CDS), zinc sulfide ( Zns), such as working substances, have the advantages of small size, high efficiency and long life, have been widely used in laser communication, laser storage, laser printing, laser gyro, laser display, laser ranging, and laser radar. . Among them, Distributed Feedback Laser, DFB) has the advantages of fast modulation rate, good single model, and is widely concerned by the industry and academia. [0003] The modulation rate of the DFB laser is related to the laser capacitance, and the laser capacitor is related to the curre...

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Problems solved by technology

[0005] In view of this, an embodiment of the present invention provides a semiconductor laser integrated chip and a manufacturing method thereof to solve the problem that the semiconductor laser chip in the prior art adopts a short cavity length structure, which leads to difficult cleavage of the laser chip, low production yield of the device, and Large thermal resistance, which affects the performance and reliability of the device, and the threshold current of the device is prone to fluctuations, resulting in unstable output power of the device, which seriously affects the technical problems of the use scene and range of semiconductor lasers

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