Preparation method of led epitaxy, led epitaxy structure and led chip

Abstract

The invention discloses an LED epitaxial preparation method, an LED epitaxial structure and an LED chip. The method includes: providing a substrate; growing a first semiconductor layer on the substrate; growing a multi-quantum well light-emitting layer on the first semiconductor layer, and the multi-quantum well light-emitting layer includes alternately stacked InGaN potential A well layer and a GaN barrier layer, the thickness of the InGaN potential well layer is 1.5-3nm; a second semiconductor layer is grown on the multi-quantum well light-emitting layer. In the present invention, by thinning the thickness of the InGaN potential well layer, the increase of In composition in the InGaN potential well layer can be realized at a lower growth temperature. The invention adopts the ultra-thin InGaN potential well layer, which can reduce the stress caused by the lattice mismatch between the InGaN potential well layer and the GaN barrier layer, improve the polarization, and effectively increase the overlapping area of ​​the electron and hole wave functions. Finally, a GaN-based LED with high internal quantum efficiency in the long wavelength band is obtained.

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular to a method for preparing a light-emitting diode (Light-Emitting Diode, LED for short) epitaxy, an LED epitaxy structure and an LED chip. Background technique [0002] At present, the mainstream GaN (gallium nitride)-based Micro (micro) and Mini LED (mini LED) are based on the structure of multiple quantum wells (Multiple Quantum Well, abbreviated as MQW). The multiple quantum well light-emitting area is composed of InGaN ( InGaN) potential well layer (Well) and GaN barrier layer (Barrier) are grown alternately periodically, and the multi-quantum well light-emitting region is the core region where carriers undergo radiative recombination and luminescence. The InGaN potential well layer has a smaller width and a narrower band gap, and will form a quantum well energy band structure with the GaN barrier layer in the multi-quantum well light-emitting region. This structure can make...

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Problems solved by technology

[0005] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a method for preparing LED epitaxy and an LED epitaxy structure, aiming to solve the problem that it is difficult to obtain high-efficiency GaN-based Micro and Mini LEDs with high In composition.

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