Gallium nitride-based resonant cavity light emitting diode and preparation method thereof

Abstract

The invention discloses a gallium nitride-based resonant cavity light-emitting diode and a preparation method thereof. The gallium nitride-based resonant cavity light-emitting diode comprises a supporting substrate, a high-contrast grating, an active region and an N-type layer which are sequentially stacked; a first reflector and an N electrode are arranged on the end face, away from the active region, of the N-type layer; and the high-contrast grating is composed of a P-type layer and a transparent conductive layer, one end face of the P-type layer is attached to the active region, the other end face of the P-type layer is etched to form a non-flat grating structure, and the transparent conductive layer is arranged in the gap and the surface of the grating structure of the P-type layer. According to the gallium nitride-based resonant cavity light emitting diode and the preparation method thereof,a part of the P-type layer and the transparent conductive layer are directly used as the high-contrast grating structure to replace a traditional bottom reflector structure, so that the series resistance of the device is reduced, the absorption loss is reduced, and the output light quality is improved; and the preparation processes are simple, all the preparation processes are compatible with a standard semiconductor preparation process, and the requirement of large-scale photoelectric integration is met.

Description

technical field [0001] The invention relates to the technical field of semiconductor light-emitting, in particular to a gallium nitride-based resonant cavity light-emitting diode and a preparation method thereof, which are suitable for semiconductor resonant cavity devices of various wavelengths (visible light band, ultraviolet light band), including vertical cavity surface emission Lasers and Resonator Light Emitting Diodes. Background technique [0002] Semiconductor resonant cavity light-emitting diodes (Resonant Cavity Light Emitting Diode, RCLED) have a wide range of applications, including semiconductor lighting, backlight display, biomedical, optical communication and so on. It consists of top and bottom mirrors for optical feedback, and an active region sandwiched between them for providing outgoing photons. Broadband cavity mirrors with high reflectivity are a necessary condition for constructing high-quality factor resonant cavity devices. The bottom reflector us...

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Problems solved by technology

There is a small difference in refractive index between the constituent materials of the nitride DBR, so it is usually necessary to stack quite a few DBR pairs to obtain a sufficiently high reflectivity, which leads to difficulties in epitaxial growth; and the dielectric film DBR has poor electrical properties. and thermal characteristics, which will greatly affect the electrical performance of the device and limit the maximum output power of the device

Although the metal mirror has better electrical and thermal properties, it is difficult to achieve high reflectivity and has higher absorption.

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