A kind of gallium nitride based resonant cavity light emitting diode and preparation method thereof

A gallium nitride-based resonant cavity, light-emitting diode technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of limiting the maximum output power of the device, affecting the electrical performance of the device, poor electrical and thermal characteristics, etc., to reduce the device. The effect of lasing threshold, improving output light quality, simplifying structure and process

CN113451464BActive Publication Date: 2022-07-19XIAMEN UNIV +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2022-07-19

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Abstract

The invention discloses a gallium nitride-based resonant cavity light-emitting diode and a preparation method thereof. The gallium-nitride-based resonant cavity light-emitting diode comprises a supporting substrate, a high-contrast grating, an active region, an N-type layer, and an N-type layer arranged in sequence. The end face of the layer away from the active area is also provided with a first mirror and an N electrode; wherein, the high-contrast grating is composed of a P-type layer and a transparent conductive layer, one end face of the P-type layer is attached to the active area, and the P-type layer The other end face of the P-type layer is etched to form a non-flat grating structure, and the transparent conductive layer is arranged on the gap and surface of the grating structure of the P-type layer; this scheme directly uses part of the P-type layer and the transparent conductive layer as the high-contrast grating structure to replace the traditional The bottom mirror structure of the device not only reduces the series resistance of the device, reduces the absorption loss, but also improves the quality of the output light, and the preparation process is simple, all the preparation processes are compatible with the standard semiconductor preparation process, and meet the needs of large-scale optoelectronic integration.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor light-emitting, in particular to a gallium nitride-based resonant cavity light-emitting diode and a preparation method thereof, which are suitable for semiconductor resonant cavity devices of various wavelengths (visible light band, ultraviolet light band), including vertical cavity surface emission Lasers and Resonator Light Emitting Diodes. Background technique

[0002] Semiconductor resonant cavity light-emitting diodes (Resonant Cavity Light Emitting Diode, RCLED) have a wide range of applications, including semiconductor lighting, backlight display, biomedical, optical communication and so on. It consists of top and bottom mirrors for optical feedback, and an active region sandwiched between them for providing outgoing photons. Broadband cavity mirrors with high reflectivity are a necessary condition for constructing high-quality factor resonant cavity devices. The bottom reflector us...

Examples

Embodiment Construction

[0043] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It is particularly pointed out that the following examples are only used to illustrate the present invention, but do not limit the scope of the present invention. Likewise, the following embodiments are only some rather than all embodiments of the present invention, and all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

[0044] like figure 1 As shown, the present embodiment is a GaN-based resonant cavity light-emitting diode, which includes a supporting substrate 6, a high-contrast grating 45, an active region 3, and an N-type layer 2 that are stacked in sequence, and the N-type layer 2 is far away from the The end face of the active region is also provided with a first mirror 8 and an N electrode 7;

[0045]The high-contrast grating 45 is compose...