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In-situ tungsten deposition without using barrier layer

A technology of barrier layer and metal layer, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of high resistivity and poor conduction of nucleation layer

Pending Publication Date: 2021-10-01
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the TiN glue layer and WSi x / WB x Neither nucleation layer conducts electricity well, leading to stacking (W / WSi x / TiN) has a very high resistivity

Method used

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  • In-situ tungsten deposition without using barrier layer
  • In-situ tungsten deposition without using barrier layer
  • In-situ tungsten deposition without using barrier layer

Examples

Experimental program
Comparison scheme
Effect test

example

[0150] For each of the following examples, samples were prepared by depositing a tungsten layer on an amorphous tungsten layer. The amorphous tungsten layer is formed by converting the amorphous silicon layer.

[0151] A nucleation layer including amorphous silicon (a-Si) is formed on the surface of the substrate by exposing the surface of the substrate to a nucleation precursor including disilane. The thickness of the nucleation layer is about to appointment within range. The surface of the substrate is substantially free of the barrier layer prior to exposure to the nucleation precursor. exposing the nucleation layer to WF at a partial pressure ranging from about 0.1 Torr to about 0.5 Torr 6 to transform the nucleation layer into a first metal layer comprising amorphous tungsten (a-W). Using WF by Atomic Layer Deposition 6 and H 2 A second metal layer is formed on the first metal layer.

example 1

[0153] Samples were prepared as indicated above. Some samples were processed "in situ" without air partition. Other samples were processed "ex situ" with air partition after formation of the nucleation layer but before formation of the first metal layer.

[0154] Samples prepared ex situ are shown in The resistivity of the lower pair of the second metal layer is about 30 μΩ·cm. Samples prepared ex situ are shown in The lower pair of the second metal layer has a resistivity of about 17 μΩ·cm.

[0155] Take pictures of the samples. Figure 11A An image of the in situ sample is shown in , while Figure 11B Images of ex situ samples are shown in . The darker layer in these images is the first metal layer. The images show that the first metal layer of the in situ processed sample has better film continuity compared to the ex situ processed sample.

[0156] Film adhesion tests were also performed on these samples. A piece of tape is brought into contact with the sample an...

example 2

[0158] Samples were also prepared on CVD OX and 1K OX substrates. CVD OX substrates are prepared by exposing a silicon substrate to a CVD process to deposit a silicon oxide layer. An aluminum oxide layer was deposited on silicon oxide and the substrate was spike annealed before further processing.

[0159] By thermally oxidizing silicon substrates in a furnace to form a thickness of approximately The silicon oxide layer was used to prepare the 1K OX substrate. An aluminum oxide layer is deposited on the silicon oxide layer. Substrates were not annealed prior to further processing.

[0160] The substrates were further processed to prepare the samples indicated above. Some samples were processed "in situ" without air partition. Other samples were processed "ex situ" with an air partition after forming the first metal layer but before forming the second metal layer.

[0161] Evaluate the sample for the second metal layer in the Resistivity, stress, resistance non-uniform...

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PUM

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Abstract

The present invention discloses an in-situ method for depositing a metal film without using a barrier layer. Some embodiments comprises steps of depositing an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. The processes are performed without air blocking therebetween.

Description

technical field [0001] The present disclosure generally relates to methods of depositing thin films. In particular, the present disclosure relates to methods of depositing tungsten or tungsten-containing films. Background technique [0002] The semiconductor processing industry continues to seek greater throughput while improving the uniformity of deposited layers on larger surface area substrates. These same factors combined with new materials also provide higher circuit integration per unit substrate area. As circuit integration increases, the need for greater uniformity and process control related to layer thickness rises. Accordingly, various techniques have been developed to deposit layers on substrates in a cost-effective manner while maintaining control over the characteristics of the layers. [0003] Chemical vapor deposition (CVD) is one of the most commonly used deposition processes for depositing layers on substrates. CVD is a flux-dependent deposition techniq...

Claims

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Application Information

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IPC IPC(8): C23C16/28C23C16/08C23C16/18H01L21/02
CPCC23C16/28C23C16/08C23C16/18H01L21/02697H01L21/76876C23C16/0272C23C16/45527C23C16/16C23C16/14H01L21/28556
Inventor 巫勇薇·V·唐郭剑秋刘雯伊杨逸雄杰奎琳·S·阮奇曼德亚姆·斯里拉姆斯里尼瓦斯·甘迪科塔何玉民
Owner APPLIED MATERIALS INC
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