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Electrostatic chuck for high bias radio frequency (RF) power application in plasma processing chamber

An electrostatic chuck, chamber technology, applied in the direction of holding devices, circuits, discharge tubes, etc. where electrostatic attraction is applied

Pending Publication Date: 2021-10-01
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the inventors have observed that RF power applied to the cooling plate to induce a bias voltage on the substrate creates a DC potential difference between the substrate and the cooling plate, possibly undesirably causing arcing in the gas channel

Method used

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  • Electrostatic chuck for high bias radio frequency (RF) power application in plasma processing chamber
  • Electrostatic chuck for high bias radio frequency (RF) power application in plasma processing chamber
  • Electrostatic chuck for high bias radio frequency (RF) power application in plasma processing chamber

Examples

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Embodiment Construction

[0014] Examples of electrostatic chucks for use in substrate processing chambers are provided herein. An electrostatic chuck includes a dielectric plate having a support surface to support a substrate. The dielectric plate is arranged on the cooling plate. In some embodiments, one or more gas channels extend from the bottom surface of the electrostatic (eg, the bottom surface of the cooling plate) to the top surface of the electrostatic chuck (eg, the top surface of the dielectric plate). The one or more gas channels are configured to provide a backside gas, such as nitrogen (N) or helium (He), to the top surface of the electrostatic chuck to act as a heat transfer medium.

[0015] In some embodiments, an RF power source is coupled to the cooling plate and configured to provide a negative bias voltage to the processed substrate. As RF power is applied to the cooling plate, the peak-to-peak voltage (Vpp) on the cooling plate and Vpp on the substrate differs depending on the i...

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Abstract

Embodiments of an electrostatic chuck are provided herein. In some embodiments, an electrostatic chuck for use in a substrate processing chamber includes a plate having a first side and a second side opposite the first side, a first electrode embedded in the plate proximate the first side, a second electrode embedded in the plate proximate the second side, a plurality of conductive elements coupling the first electrode to the second electrode, a first gas channel disposed within the plate and between the first electrode and the second electrode, a gas inlet extending from the second side of the plate to the first gas channel; and a plurality of gas outlets extending from the first side of the plate to the first gas channel.

Description

technical field [0001] Embodiments of the present disclosure relate generally to substrate processing systems, and more specifically, to electrostatic chucks for use in substrate processing systems. Background technique [0002] Radio frequency (RF) power is commonly used in etching processes such as infrastructure that require very high aspect ratio holes for contacts or deep trenches for laying electrical paths. RF power can be used to generate a plasma on the substrate to be processed and / or establish a bias to attract ions from the bulk plasma. Electrostatic chucks are used to electrostatically hold substrates to control substrate temperature during processing. An electrostatic chuck generally includes electrodes embedded in a dielectric plate and a cooling plate disposed below the dielectric plate. An RF power source for establishing bias voltage is applied to the cooling plate. Backside gas can be introduced between the substrate and the electrostatic chuck through ...

Claims

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Application Information

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IPC IPC(8): H01L21/683H02N13/00H01J37/32B23Q3/15H01L21/67
CPCH01J37/32724H01L21/68742H01L21/67109H01L21/6833H01L21/683H02N13/00B23Q3/15H01J37/32642H01L21/67069H01J2237/3341H01J2237/002
Inventor 赵在龙S·拉乌夫P·田
Owner APPLIED MATERIALS INC
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