High-precision silicon-based mask plate and processing method thereof

Abstract

The invention provides a high-precision silicon-based mask plate and a processing method thereof. According to the high-precision silicon-based mask plate, an SOI sheet is used as a substrate, and a silicon oxide layer in the middle of the SOI sheet can be used as a cut-off layer for front deep silicon etching and can also be used as a cut-off layer for back windowing wet etching, so that fine patterns on the front surface can be protected during back wet etching, and etching liquid is effectively prevented from damaging the patterns on the front surface from the back surface; and meanwhile, the process sequence of dry etching of the front patterns and then wet etching windowing is adopted, so that the uniformity of front deep silicon etching can be improved, and the deviation of the etching depth of different areas of a silicon wafer is within 5%. In addition, the minimum line width of the silicon-based mask plate prepared through the method is 2 microns, the thinnest thickness of the hollow part is 20 microns, the mechanical strength is high, the silicon-based mask plate can be reused, and the patterns can be customized.

Description

technical field [0001] The invention belongs to the technical field of silicon-based mask plates, in particular to a high-precision silicon-based mask plate and a processing method thereof. Background technique [0002] In the field of micro-nano processing, organic materials and two-dimensional materials have begun to have more and more applications, but the patterned processing of organic materials and two-dimensional materials cannot use conventional photolithography, coating, stripping, and etching processes, because these materials Performance will be affected or even completely destroyed during photolithography development and etching. For example, in the production process of OLED panels, it is necessary to vapor-deposit organic light-emitting materials into each pixel. When studying the electrical and optoelectronic properties of two-dimensional materials, it is generally necessary to deposit high-precision metal electrodes on two-dimensional materials. These two-dim...

AI Technical Summary

Problems solved by technology

However, due to the limitation of metal materials, the processing accuracy of the metal via mask can only reach about 50 microns. As the pixels become higher and higher, the metal via mask can no longer meet the process requirements. The minimum line width requirements for electrodes are basically below 10 microns when metal electrodes are deposited on

Images