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Negative electrode material, electrochemical device, and electronic device

A negative electrode material, electrochemical technology, applied in the field of electrochemical devices and electronic devices, can solve the problems of accelerating material attenuation and failure, accelerating carbon layer peeling, etc., to achieve the goal of reducing energy barrier, increasing bond length, and improving electron and ion conduction Effect

Active Publication Date: 2021-10-19
NINGDE AMPEREX TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the other hand, the destruction of the material will produce a fresh interface, and multiple cycles will produce a large number of SEI by-products. When the interface is not tightly bonded and firm, this layer of by-products will promote and accelerate the peeling off of the carbon layer, thereby accelerating the decay and degradation of the material. fail

Method used

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  • Negative electrode material, electrochemical device, and electronic device
  • Negative electrode material, electrochemical device, and electronic device
  • Negative electrode material, electrochemical device, and electronic device

Examples

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preparation example Construction

[0039] Second, the preparation method of silicon-based composite

[0040] The present application also provides a method for preparing a silicon-based composite, which includes the following steps:

[0041] Step A: Mix the gas phase first mixture (Si and SiOx molar ratio is 1:1, 0.5<x<1.5) with the gas phase dopant element source (germanium dioxide or boric acid) and deposit on the substrate to obtain a silicon-based composite a precursor, wherein the gas phase first mixture comprises silicon oxide;

[0042] Step B: cooling the silicon-based composite precursor to obtain the silicon-based composite.

[0043] According to some embodiments of the present application, the preparation of the first mixture in the gas phase includes heat-treating the first mixture, wherein the first mixture includes silicon oxide.

[0044] According to some embodiments of the present application, the preparation of the gas-phase doping element source includes heating the doping element source.

...

Embodiment 1

[0134] The comparison between Example 1 and Comparative Example 2 shows that bulk phase doping of SiOx with germanium can improve the ionic and electronic conductivity of the entire material, while surface doping only improves the properties of the material surface, and the cycle of bulk phase doping is better than surface doping.

[0135] The comparison between Example 1 and Comparative Example 3 shows that: Comparative Example 3 is a mixture of germanium and silicon oxide, and is not bulk phase doped, and the content of germanium is higher than 10%, and the cycle performance of Comparative Example 3 is poor.

[0136] In Table 2, the amount of metal silicon powder added in the preparation process of the negative electrode material was 28g, the amount of fumed silica powder added was 60g, and amorphous carbon was used for CVD coating of the surface carbon material.

[0137] Wherein each parameter value of the negative electrode material of embodiment 10 to embodiment 18 is as f...

Embodiment 2

[0150] Other parameter values ​​of the negative electrode material of embodiment 2, embodiment 19 to embodiment 27 are as follows:

[0151] Dv50 are 3.2μm, 3.2μm, 3.2μm, 3.2μm, 3.2μm, 3.2μm, 3.2μm, 5.2μm, 2.6μm, 5.5μm;

[0152] Dv90 are 6.9μm, 6.8μm, 6.9μm, 6.8μm, 6.7μm, 6.9μm, 6.8μm, 8.0μm, 6.9μm, 8.0μm;

[0153] Dv99 are 9.5μm, 9.4μm, 9.3μm, 9.4μm, 9.5μm, 9.5μm, 9.4μm, 12.0μm, 9.3μm, 12.01μm;

[0154] BET is 2.9m respectively 2 / g, 2.9m 2 / g, 2.8m 2 / g, 2.7m 2 / g, 2.8m 2 / g, 2.7m 2 / g, 2.9m 2 / g, 2.0m 2 / g, 4.4m 2 / g, 3.3m 2 / g;

[0155] The values ​​of relational expression (1) are 2.01, 1.97, 1.81, 1.97, 2.14, 2.01, 1.97, 3.84, 1.81, 3.85;

[0156] The values ​​of relational expression (2) are 3.99, 3.98, 3.89, 3.78, 3.87, 3.79, 3.98, 3.21, 5.49, 4.52, respectively.

[0157] table 3

[0158]

[0159] The comparison of Example 2 and Example 19 to Example 25 shows that the content of carbon needs to be between 0.1% and 10%. If the content is lower than 0.1%,...

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Abstract

The invention relates to a negative electrode material, an electrochemical device and an electronic device. The negative electrode material comprises a silicon-based compound; in an X-ray diffraction pattern of the negative electrode material, the peak intensity of 2 theta at 22.0-24.0 degrees is I1, the peak intensity of 2 theta at 44.0-46.0 degrees is I2, and the I2 a I1 meets the relational expression I2 / I1 > 1. According to the negative electrode material disclosed by the invention, SiOx bulk phase doping is carried out by using a doping element, the doping element and silicon form a chemical bond, the bond length between silicon and oxygen is increased, and the energy barrier of the silicon-oxygen material in lithium intercalation is reduced, so that the electron and ion conduction of the silicon-oxygen material is improved, and the rate capability of the material and the expansion in the cycle process are remarkably improved.

Description

technical field [0001] The present application relates to the field of lithium ion batteries. Specifically, the present application relates to a negative electrode material, a negative electrode including the negative electrode material, an electrochemical device and an electronic device. Background technique [0002] In recent years, due to the reversible capacity of silicon as high as 4200mAh / g, it is considered to be the most likely lithium-ion anode material for large-scale application. Since the material will expand and shrink during the charging and discharging process, the tight coating structure can effectively alleviate the structural damage during this process. On the other hand, the destruction of the material will produce a fresh interface, and multiple cycles will produce a large number of SEI by-products. When the interface is not tightly bonded and firm, this layer of by-products will promote and accelerate the peeling off of the carbon layer, thereby acceler...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/62H01M4/48H01M10/0525
CPCH01M4/628H01M4/483H01M10/0525H01M2004/027Y02E60/10
Inventor 陈聪荣
Owner NINGDE AMPEREX TECH
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