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Preparation method of chlorine trifluoride

A technology of chlorine trifluoride and potassium fluoride, applied in the direction of interhalogen compounds, etc., can solve the problems of failing to meet high-purity quality requirements, affecting the yield of chlorine trifluoride products, failing to meet technical indicators, etc., and achieving product yields Increased, faster, faster spawn rate effects

Pending Publication Date: 2021-10-29
鹤壁德瑞科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high HF impurities in fluorine gas, the low concentration of fluorine gas, and the high impurities in the generated CLF affect the yield of chlorine trifluoride products, especially HF is difficult to be processed in depth. After chlorine trifluoride gas is rectified, the current HF The content ranges from 500PPm to 700PPm, and the concentration of chlorine trifluoride is only 99.9%, which cannot meet the high-purity quality requirements of the current microelectronics industry development, especially the technical indicators of high-purity chlorine trifluoride for HF

Method used

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Examples

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preparation example Construction

[0014] A preparation method for chlorine trifluoride, comprising the following steps:

[0015] Purification of fluorine gas: After primary condensation, secondary condensation, alkali metal adsorption and filtration of the fluorine-containing mixed gas produced by electrolysis, purified fluorine gas is obtained;

[0016] Preparation of chlorine trifluoride: add purified fluorine gas and high-purity chlorine gas into a reactor containing a catalyst, and react to obtain crude chlorine trifluoride;

[0017] Purification of chlorine trifluoride: Chlorine trifluoride is liquefied, vaporized, adsorbed and rectified to obtain high-purity chlorine trifluoride.

[0018] Purification of fluorine gas can remove impurity gases such as hydrogen fluoride and carbon tetrafluoride produced by electrolysis, so as to obtain fluorine gas with a purity of more than 99.9%, and high-purity fluorine gas and high-purity chlorine gas can be produced with a higher content Chlorine tetrafluoride gas, b...

Embodiment 1

[0031] A preparation method of chlorine trifluoride, which comprises the following steps of purifying chlorine, preparing chlorine trifluoride and purifying chlorine trifluoride, specifically:

[0032] Purification of fluorine gas: The fluorine-containing mixed gas produced by electrolysis is condensed once in a condenser at -70°C to remove liquid hydrogen fluoride, then lower the temperature to -160°C for secondary condensation, remove liquid carbon tetrafluoride, and then send it into Adsorption is carried out in a reaction tower equipped with alkali metals to further remove hydrogen fluoride, and after filtration in a filter tower filled with polymer fillers, purified fluorine gas is obtained; the purity of the purified fluorine gas in this embodiment is greater than 99.99%. The alkali metal in this embodiment is potassium fluoride, which is activated at a high temperature of 150° C. for 10 minutes before filling. The preparation method of the polymer filler in this example...

Embodiment 2

[0036] A preparation method of chlorine trifluoride, which comprises the following steps of purifying chlorine, preparing chlorine trifluoride and purifying chlorine trifluoride, specifically:

[0037] Purification of fluorine gas: The fluorine-containing mixed gas produced by electrolysis is condensed once in a condenser at -80°C to remove liquid hydrogen fluoride, then lower the temperature to -180°C for secondary condensation, remove liquid carbon tetrafluoride, and then send it into Adsorption is carried out in a reaction tower equipped with alkali metals to further remove hydrogen fluoride, and after filtration in a filter tower filled with polymer fillers, purified fluorine gas is obtained; the purity of the purified fluorine gas in this embodiment is greater than 99.99%. The alkali metal in this embodiment is potassium fluoride, which is activated at a high temperature of 100° C. for 12 minutes before filling. The preparation method of polymer filler in this example is ...

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Abstract

The invention provides a preparation method of chlorine trifluoride, and relates to the technical field of chemical synthesis. The preparation method of chlorine trifluoride comprises the steps of carrying out primary condensation, secondary condensation, alkali metal adsorption and filtration on fluorine-containing mixed gas generated by electrolysis to obtain purified fluorine gas; adding the purified fluorine gas and high-purity chlorine gas into a reactor containing a catalyst, and reacting to obtain a chlorine trifluoride crude product; and carrying out liquefaction, vaporization, adsorption and rectification on the chlorine trifluoride crude product to obtain high-purity chlorine trifluoride. According to the preparation method disclosed by the invention, high-purity chlorine trifluoride can be prepared.

Description

technical field [0001] The invention relates to the technical field of chemical synthesis, in particular to a preparation method of chlorine trifluoride. Background technique [0002] Chlorine trifluoride is the most active halogen fluoride known chemically, and is a powerful fluorinating agent. The boiling point of chlorine trifluoride is 11.5°C. It is a gas that is easy to condense under normal circumstances. It can be reacted in any state of gas or liquid as required, which is beyond the reach of general fluorinating agents. Many metal oxides and chlorides react with chlorine trifluoride to generate corresponding chlorides when heated. Using the characteristics of chlorine trifluoride, many important metal fluorides can be prepared, especially for the separation and purification of rare elements. . With the rapid development of semiconductor, liquid crystal, solar energy and LED industries, chlorine trifluoride has been widely used in the cleaning process of CVD chamber...

Claims

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Application Information

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IPC IPC(8): C01B7/24
CPCC01B7/24C01P2006/80
Inventor 冉康德冀勇马本辉
Owner 鹤壁德瑞科技有限公司
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