5results about "Inter-halogen compounds" patented technology

Provided is a method for producing a fluorinated organic compound by fluorinating an organic compound in the presence of a fluorinating composition comprising IF5, iodine, and an amine, the composition comprising the iodine in an amount of 0.12 mol or less per mole of the IF5. This production method can synthesize a fluorinated organic compound with high efficiency.

A method for removing fluorine gas from a fluorine-containing gas containing fluorine gas and a fluorine-containing compound gas is provided. A method for removing fluorine gas from a fluorine-containing gas containing fluorine gas and a fluorine-containing compound gas includes a removal step in which the fluorine-containing gas is brought into contact with at least one metal salt selected from the group consisting of metal chlorides, metal bromides, and metal iodides.

An object of the present invention is to provide a high-accuracy measurement method that, in the measurement of the concentration of fluorine gas contained in a halogen fluoride-containing gas using a mass spectrometer, reduces the amount of measurement errors of the concentration of fluorine gas that are caused by consumption due to reactions between metal members and impurities, and fluorine gas on the gas passage. The present invention includes a method for measuring the concentration of fluorine gas (F2) contained in a halogen fluoride-containing gas by using an analysis apparatus having a halogen fluoride-containing gas supply source, a fluorine-containing gas supply source, a tube, a capillary, and a mass spectrometer, the method comprising, before measuring the concentration of fluorine gas, performing passivation treatment on the tube and the capillary by using a passivation gas containing a fluorine-containing gas supplied from the fluorine-containing gas supply source.

The invention provides a method for producing a purified fluorine-containing gas composition capable of inhibiting Cr from being mixed into a surface to be processed during etching, a method for producing a semiconductor device using the method for producing the purified fluorine-containing gas composition, and an etching apparatus. The present invention relates to a method for producing a purified fluorine-containing gas composition, comprising a contact step for bringing a crude fluorine-containing gas composition containing a fluorine-containing gas composition containing 98 vol% or more of fluorine-containing molecules other than hydrogen fluoride and having a Cr concentration of 100 ppb by mass or less into contact with a solid metal fluoride at 30 DEG C or less.

This invention provides a method for producing iodofluoroalkane compounds that improves reaction conversion rate, selectivity, and environmental impact by using more suitable reagents or operating conditions. [Solution] The present invention provides a method comprising the following steps: a) contacting a fluoroolefin with hydrogen iodide to form a flow A containing the iodofluoroalkane compound and unreacted hydrogen iodide; b) separating flow A into a first flow B1 containing the iodofluoroalkane compound and a flow B2 containing unreacted hydrogen iodide; and c) recirculating flow B2 back to step a).