4 results about "Chlorine trifluoride" patented technology

An apparatus includes a body configured to support a substrate, a first coating, conformal on a surface of the body, that is corrosion resistant to at least one of: boron trichloride, nitrogen trifluoride, hafnium tetrachloride, aluminum trichloride, oxygen gas, chlorine gas, fluorine gas, chlorine trifluoride, hydrogen fluoride, hydrogen gas, ammonia, tungsten hexafluoride, tetrafluoromethane, titanium tetrachloride, molybdenum pentachloride, ozone, tetrafluorosilane, or hexafluoroethane, and a second coating, on the first coating, having a hardness that greater than or equal to about 8 gigapascals.

The invention belongs to the field of synthesis of molybdenum dioxide dichloride, and particularly relates to a synthesis method of molybdenum dioxide dichloride. Comprising the following steps: S1, pretreating a molybdenite raw material; s2, the pretreated molybdenite raw material is placed in a reactor, chlorine trifluoride, oxygen, fluorine mixed gas and inert gas are introduced into the reactor and react with the pretreated molybdenite raw material at the reaction temperature of 20-50 DEG C, and a crude product of dichloromolybdenum dioxide and a crude product of sulfur tetrafluoride are generated; and collecting a dichloromolybdenum dioxide crude product from the bottom of the reactor. The raw ore molybdenite is used as the molybdenum raw material, the cost of the synthesis process is reduced, the process route is simple, and the reaction conditions are milder; in addition, the byproduct sulfur tetrafluoride in the invention is a product with high added value.

The invention provides a device and method for preparing uranium hexafluoride based on uranium-containing molten salt, the uranium-containing molten salt contains uranium dioxide and / or triuranium octaoxide, and the device comprises a reaction cavity used for containing the uranium-containing molten salt; the gas inlet is communicated with the reaction cavity and is used for introducing fluorinated gas containing chlorine trifluoride into the reaction cavity, the chlorine trifluoride is subjected to fluorination reaction with each of uranium dioxide and / or triuranium octaoxide, and the fluorination reaction generates reaction gas containing uranium hexafluoride; the gas outlet is communicated with the reaction cavity and is used for discharging reaction gas; and the separation unit is used for separating uranium hexafluoride from the reaction gas.

The application belongs to the technical field of cleaning silicon carbide epitaxial furnace, and discloses an epitaxial furnace cleaning method, device, electronic equipment and storage medium, the method comprises the following steps: obtaining silicon carbide information of a graphite part in an epitaxial furnace reaction chamber before cleaning; setting the epitaxial furnace reaction chamber as a vacuum cleaning environment; adjusting the motion state of a graphite tray in the epitaxial furnace reaction chamber to a rotating state; using argon and chlorine trifluoride gas, based on a preset temperature range and a preset pressure range, combining the vacuum cleaning environment and the rotating state of the graphite tray, cleaning the epitaxial furnace reaction chamber, obtaining silicon carbide information after cleaning, comparing the silicon carbide information before cleaning with the silicon carbide information after cleaning, and determining the cleaning effect. By setting a vacuum environment, maintaining the rotating state of the graphite tray, and adjusting the corresponding temperature and pressure, argon and chlorine trifluoride gas are used to clean the epitaxial furnace, thereby improving the cleaning efficiency of the epitaxial furnace.