7 results about "Chlorine trifluoride" patented technology

The invention belongs to the technical field of corrosive gas analysis, and particularly relates to an online analysis gas sample treatment system. According to the invention, the sampling system can realize sampling of a gas sample to be detected, the gas sample to be detected is transmitted to the sample processing system through the sample transmission system, the sample processing system can realize analysis pretreatment of the gas sample to be detected and purging of a residual sample, and the sample processing system comprises a plurality of electronic elements. The electronic integration system can control each electronic element in the sample processing system; the sample processing system is arranged in the protective cabinet, and the protective cabinet can shield, protect, fix and support the sample processing system, so that the maintainability and the regularity of the sample processing system are improved. The functions of sampling, sample treatment, tail gas treatment, carrier gas input and the like of fluorine gas, fluorine gas, chlorine trifluoride and standard gas under different system pressures can be achieved at the same time, and automatic sample introduction analysis of different samples is achieved through an integrated control system.

An apparatus includes a body configured to support a substrate, a first coating, conformal on a surface of the body, that is corrosion resistant to at least one of: boron trichloride, nitrogen trifluoride, hafnium tetrachloride, aluminum trichloride, oxygen gas, chlorine gas, fluorine gas, chlorine trifluoride, hydrogen fluoride, hydrogen gas, ammonia, tungsten hexafluoride, tetrafluoromethane, titanium tetrachloride, molybdenum pentachloride, ozone, tetrafluorosilane, or hexafluoroethane, and a second coating, on the first coating, having a hardness that greater than or equal to about 8 gigapascals.

A method of forming a semiconductor device structure includes forming a fin structure on a substrate, wherein the fin structure includes a first plurality of semiconductor layers made of a first semiconductor material and a second plurality of semiconductor layers made of a second semiconductor material. A sacrificial gate stack is formed over the fin structure. Portions of the fin structure adjacent the sacrificial gate stack are removed to expose portions of the substrate. A plurality of edge portions of the second plurality of semiconductor layers are removed in a lateral direction to form a plurality of recesses, wherein removing the edge portions includes performing a selective dry etching process using a gas etchant including chlorine trifluoride. An internal spacer is formed in the recess. A source / drain region is formed adjacent the sacrificial gate stack. The sacrificial gate stack and the second plurality of semiconductor layers are removed. A gate structure is formed to replace the sacrificial gate stack and the second plurality of semiconductor layers.

The invention belongs to the field of synthesis of molybdenum dioxide dichloride, and particularly relates to a synthesis method of molybdenum dioxide dichloride. Comprising the following steps: S1, pretreating a molybdenite raw material; s2, the pretreated molybdenite raw material is placed in a reactor, chlorine trifluoride, oxygen, fluorine mixed gas and inert gas are introduced into the reactor and react with the pretreated molybdenite raw material at the reaction temperature of 20-50 DEG C, and a crude product of dichloromolybdenum dioxide and a crude product of sulfur tetrafluoride are generated; and collecting a dichloromolybdenum dioxide crude product from the bottom of the reactor. The raw ore molybdenite is used as the molybdenum raw material, the cost of the synthesis process is reduced, the process route is simple, and the reaction conditions are milder; in addition, the byproduct sulfur tetrafluoride in the invention is a product with high added value.

The invention provides a device and method for preparing uranium hexafluoride based on uranium-containing molten salt, the uranium-containing molten salt contains uranium dioxide and / or triuranium octaoxide, and the device comprises a reaction cavity used for containing the uranium-containing molten salt; the gas inlet is communicated with the reaction cavity and is used for introducing fluorinated gas containing chlorine trifluoride into the reaction cavity, the chlorine trifluoride is subjected to fluorination reaction with each of uranium dioxide and / or triuranium octaoxide, and the fluorination reaction generates reaction gas containing uranium hexafluoride; the gas outlet is communicated with the reaction cavity and is used for discharging reaction gas; and the separation unit is used for separating uranium hexafluoride from the reaction gas.

The present invention relates to a process for the co-production of tungsten halides and carbon tetrafluoride. Tungsten carbide or a mixture of tungsten carbide and carbon is added to a reactor, chlorine trifluoride gas is introduced into the reactor, the reactor temperature is controlled at 340-400°C, the reaction pressure is 0.01-0.15 MPa, and a reaction is carried out to obtain a mixture comprising tungsten hexachloride, tungsten pentachloride, tungsten hexafluoride, and carbon tetrafluoride. After the reaction is completed, the reaction products are sequentially collected through a four-stage cold trap, with the first stage collecting tungsten hexachloride, the second stage collecting tungsten pentachloride, the third stage collecting tungsten hexafluoride, and the fourth stage collecting carbon tetrafluoride. The present invention has relatively mild reaction conditions, a reaction temperature below 400°C, higher safety, low raw material cost, high atom economy, higher safety, lower energy consumption, no by-products, and great economic benefits and development prospects. It meets the production requirements of chemical enterprises for safety, environmental protection, high efficiency, and circular economy.

The application belongs to the technical field of cleaning silicon carbide epitaxial furnace, and discloses an epitaxial furnace cleaning method, device, electronic equipment and storage medium, the method comprises the following steps: obtaining silicon carbide information of a graphite part in an epitaxial furnace reaction chamber before cleaning; setting the epitaxial furnace reaction chamber as a vacuum cleaning environment; adjusting the motion state of a graphite tray in the epitaxial furnace reaction chamber to a rotating state; using argon and chlorine trifluoride gas, based on a preset temperature range and a preset pressure range, combining the vacuum cleaning environment and the rotating state of the graphite tray, cleaning the epitaxial furnace reaction chamber, obtaining silicon carbide information after cleaning, comparing the silicon carbide information before cleaning with the silicon carbide information after cleaning, and determining the cleaning effect. By setting a vacuum environment, maintaining the rotating state of the graphite tray, and adjusting the corresponding temperature and pressure, argon and chlorine trifluoride gas are used to clean the epitaxial furnace, thereby improving the cleaning efficiency of the epitaxial furnace.