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A device and method for collecting metal ions on a wafer surface

A surface metal and acquisition device technology, applied in the direction of measuring devices, instruments, semiconductor/solid-state device testing/measurement, etc., can solve problems such as scanning and sampling, and achieve the effects of improving sampling efficiency, reducing scrap, and reducing testing costs

Active Publication Date: 2022-03-22
XIAN ESWIN SILICON WAFER TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the current collection devices for metal ion content on the wafer surface can only scan and collect metal ions on the front and edge of the wafer or the back and edge of the wafer, and cannot scan and sample the front, back and edge of the wafer at the same time. When testing the metal ion content on the surface and edge of the wafer, the device needs at least two wafers to measure the metal ion content on the front, back and edge of the wafer

Method used

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  • A device and method for collecting metal ions on a wafer surface
  • A device and method for collecting metal ions on a wafer surface
  • A device and method for collecting metal ions on a wafer surface

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Embodiment Construction

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.

[0025] Before the detailed description of the metal ion collection device on the wafer surface provided by the embodiment of the present disclosure, the related technologies are described as follows:

[0026] In the related art, in order to realize the test of ultra-trace metal ion content, the metal ion content test of the wafer needs to use gas phase decomposition (Vapor Phase Decomposition, VPD) and inductively coupled plasma mass spectrometry (Inductively Coupled Plasma-Mass Spectrometry, ICP-MS ) two kinds of equipment to carry out ion quantitative analysis on the collected VPD liquid, the general steps include:

[0027] S1. The wafer is transferred to the VPD etching tank by the robot, and the HF solution steam is passed into the VPD etching tank for 2-5 minutes to remov...

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Abstract

The embodiment of the present invention discloses a wafer surface metal ion collection device and method; the wafer surface metal ion collection device includes: a base; The first suction cup and the second suction cup are round, and the second suction cup can be turned over; and the first suction cup and the second suction cup are gas suspension non-contact air cavity vacuum suction cups; used to make the scanning liquid in the The surface of the wafer rolls to collect the gas phase decomposition collector of metal ions on the surface of the wafer; wherein, the collector is provided with at least one scanning nozzle for spraying scanning liquid on the surface of the wafer; for A kinematic mechanism that controls movement and / or rotation of the collector.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a device and method for collecting metal ions on a wafer surface. Background technique [0002] Wafers are obtained by magnetic field Czochralski Method (MCZ) to obtain monocrystalline silicon rods, and single crystal silicon rods are prepared by wire cutting, grinding, polishing, cleaning and other processes. In the process of wafer processing, there will be various metal impurities contamination, which will lead to the failure of subsequent devices. Among them, light metals (Na, Mg, Al, K, Ca, etc.) will cause device breakdown and reduce the voltage, and heavy metals (Cr , Mn, Fe, Ni, Cu, Zn, etc.) will lead to reduced device life. As the raw material of the device, the metal content on the surface of the wafer will directly affect the qualification rate of the device. Therefore, it is necessary to test the metal ion content on the surface and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/626G01N35/00H01L21/683H01L21/66
CPCG01N27/626G01N35/0099H01L21/6838H01L22/12H01L22/20
Inventor 蒲以松
Owner XIAN ESWIN SILICON WAFER TECH CO LTD
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