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TFT backboard, LED display panel and manufacturing method thereof

A technology for LED devices and backplanes, applied in electrical components, electrical solid-state devices, circuits, etc., can solve the problems of conduction and short circuit inside the TFT backplane, low transfer yield, etc., to improve transfer yield and avoid short circuits. Effect

Pending Publication Date: 2021-10-29
HUIZHOU CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD +1
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  • Description
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  • Application Information

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Problems solved by technology

However, in the transfer process of the existing LED devices, it often happens that the TFT backplane is under too much pressure and the internal circuit conduction is short-circuited, resulting in a low transfer yield.

Method used

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  • TFT backboard, LED display panel and manufacturing method thereof
  • TFT backboard, LED display panel and manufacturing method thereof
  • TFT backboard, LED display panel and manufacturing method thereof

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Embodiment Construction

[0028] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0029] The embodiment of the present application provides a TFT backplane for transferring LED devices. When transferring, firstly attach ACF (Anisotropic Conductive Adhesive) on the TFT backplane, then install the LED device on the ACF, and finally attach the LED device to the ACF. The ACF and the TFT backplane on which the LED device is installed are pressed to release the conductive balls (such as gold balls) in the ACF to realize the electrical connection between the LED devi...

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Abstract

The embodiment of the invention provides a TFT (Thin Film Transistor) backboard, an LED (Light Emitting Diode) display panel and a manufacturing method thereof. The TFT backboard comprises a display transistor area, an LED combination area and a pressure-sensitive transistor area. A display transistor is arranged in the display transistor area, and the display transistor comprises a first active layer, a first grid electrode, a first source electrode and a first drain electrode; a first conductive layer is arranged on the top surface of the LED combination area and is electrically connected with the first drain electrode; and a pressure-sensitive transistor is arranged in the pressure-sensitive transistor region and comprises a second active layer, a gate insulating layer, a second grid electrode, a first pressure-sensitive material layer and a second conductive layer which are sequentially stacked. According to the TFT backboard provided by the embodiment of the invention, the pressure-sensitive transistor is arranged, when the first pressure-sensitive material layer is pressed, the pressure-sensitive transistor is opened to generate current, and a pressure signal is converted into an electric signal, so that the change of pressure borne by the TFT backboard in an LED transfer pressing process can be monitored in real time by monitoring the magnitude of the electric signal.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a TFT backplane, an LED display panel and a manufacturing method thereof. Background technique [0002] Mini / Micro LED (MLED) display technology has entered a stage of accelerated development in recent years, and can be applied to small and medium-sized high value-added display applications. Compared with OLED screens, MLED displays can show better performance in terms of cost, contrast ratio, high brightness and thin and light appearance. In MLED display technology, it involves TFT backplane technology and back-end LED chip transfer technology, and the back-end mass transfer technology is the bottleneck technology for Micro-LED mass production. Currently, the widely used transfer process is anisotropic conductive glue (ACF) craft. [0003] In the ACF transfer technology, it is necessary to press the entire surface of the ACF after lamination, so that the Au balls in...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L27/15
CPCH01L27/1214H01L27/1244H01L27/156
Inventor 罗传宝
Owner HUIZHOU CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD
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