Method for preventing edge dislocation of silicon carbide crystal from slipping inwards

Abstract

The invention discloses a method for preventing edge dislocation of a silicon carbide crystal from slipping inwards, which comprises the following steps that: 1, a thermal field is constructed, namely a crucible is placed in a heat preservation cover, and then the crucible and the heat preservation cover are placed in a growth cavity of a crystal growth furnace, wherein the heat preservation cover comprises a heat preservation cover, the bottom of the heat preservation cover is provided with a circular groove coaxial with a heat preservation cylinder, and the diameter of the circular groove is at least smaller than the diameter of a silicon carbide seed crystal by 1 mm and larger than or equal to two thirds of the diameter of the silicon carbide seed crystal; and 2, a silicon carbide crystal is prepared by using the thermal field, wherein an annular morphology roughly corresponding to the groove side wall position of the circular groove is formed in the position, close to the edge, of the obtained silicon carbide crystal, and the width of the annular morphology is 100-600 microns. According to the method for preventing the edge dislocation of a silicon carbide crystal from slipping inwards, a silicon carbide crystal with an annular morphology with a certain width at the edge position can be obtained, the annular morphology can prevent the edge dislocation on the outer side of the morphology from slipping towards the inner side of the annular morphology, and the crystal quality of the middle area of the silicon carbide crystal is improved.

Description

technical field [0001] The present application belongs to the technical field of silicon carbide crystal materials, and in particular relates to a method for blocking edge dislocations of silicon carbide crystals from slipping inward. Background technique [0002] Silicon carbide material (SiC) has attracted extensive attention due to its excellent semi-insulating properties, especially for high-power semiconductor devices with special requirements. SiC has become the choice of these devices due to its high temperature, high frequency, high power and other characteristics. potential material. [0003] At present, the industrial production of SiC crystals mostly adopts the physical vapor phase method (PVT method) for production, but due to its high growth conditions, it is easy to cause crystal defects during the growth process, and the formation of crystal defects limits the improvement of its performance and further development. application and development. For example, t...

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Problems solved by technology

[0005] Therefore, the prior art has not been able to provide a method for producing defects in the crystal and utilizing the defects to obtain high-quality silicon carbide crystals

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