Preparation method of light-emitting diode epitaxial wafer with p-type composite layer

Abstract

The invention discloses a preparation method of a light-emitting diode epitaxial wafer with a p-type composite layer, and belongs to the field of light-emitting diode manufacturing. The p-type composite layer is grown on a multi-quantum well layer, the p-type composite layer comprises a p-type InGaN layer and a p-type GaN layer, the In element has the effect of reducing the activation energy of Mg, and the activation rate of Mg in the p-type InGaN layer and the p-type GaN layer can be improved so as to improve the number of holes. The p-type InGaN layer is inserted in the p-type GaN layer, and the p-type InGaN layer can be used as a low-barrier region, stores part of holes and expands the holes, so that the holes can enter the multi-quantum well layer more uniformly, and the light emitting uniformity of the light emitting diode is improved. The light-emitting efficiency and the light-emitting uniformity of the light-emitting diode can be improved.

Description

technical field [0001] The invention relates to the field of light-emitting diode production, in particular to a method for preparing a light-emitting diode epitaxial wafer with a p-type composite layer. Background technique [0002] A light emitting diode is a semiconductor electronic component that emits light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, etc. Improving the luminous efficiency of chips is the goal that LEDs are constantly pursuing. [0003] The light-emitting diode epitaxial wafer is the basic structure for preparing light-emitting diodes. The light-emitting diode epitaxial wafer includes at least a substrate and an n-type GaN layer on the substrate, a multi-quantum well layer and a p-type GaN layer. The p-type GaN layer is usually doped with Mg to increase the number of ho...

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Problems solved by technology

However, the number of holes that the p-type GaN layer can provide is limited. If the p-type GaN layer is heavily doped with Mg to increase the number of holes, it will cause too many defects, and when there are too many Mg elements, it is easy to cause p-type The uneven doping of Mg in the GaN layer leads to the problem of many defects in the p-type GaN layer, which leads to the unsatisfactory luminous efficiency of the final light-emitting diode.

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