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Preparation method of silicon carbide single crystal, single crystal growth furnace and heating device of single crystal growth furnace

The technology of a heating device and a crystal growing furnace is applied in the field of single crystal crystal growing furnace, the preparation of silicon carbide single crystal, and the heating device of single crystal crystal growing furnace, which can solve the problems of low control accuracy and the like

Pending Publication Date: 2021-11-16
宁波合盛新材料有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although the equipment used to grow SiC single crystals by PVT method is simple and can grow high-quality and large-sized SiC single crystals, PVT method is a complicated process. To obtain high-quality SiC materials, various crystal growth parameters must be accurately controlled. , especially the temperature and temperature gradient, the control accuracy of the existing PVT crystal growth furnace to the temperature gradient field in the graphite crucible is low

Method used

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  • Preparation method of silicon carbide single crystal, single crystal growth furnace and heating device of single crystal growth furnace
  • Preparation method of silicon carbide single crystal, single crystal growth furnace and heating device of single crystal growth furnace
  • Preparation method of silicon carbide single crystal, single crystal growth furnace and heating device of single crystal growth furnace

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preparation example Construction

[0061]The invention provides a method for preparing a silicon carbide single crystal, which is carried out by using the single crystal growth furnace described in the above technical solution, comprising the following steps:

[0062] When the pressure of the single crystal growth chamber is the second pressure, the temperature of the raw material zone is controlled to a fourth temperature by using the first heater and the second heater, and the temperature of the long-term zone is controlled by the second heater. controlling the temperature of the crystal region to be the fifth temperature, and controlling the temperature of the gas phase region to be the sixth temperature;

[0063] The axial temperature gradient of the raw material zone controlled by the first heater and the second heater is 1-3°C / min, and the axial temperature gradient of the crystal growth zone and the gas phase zone controlled by the second heater are independent The ground temperature is 2-5°C / min, and th...

Embodiment 1

[0094] use Figure 4 For the single crystal growth furnace shown, the bottom area of ​​the crucible is 200mm×200mm, and the height is 180mm. figure 1 The shown first heater 1, the effective heating area of ​​the first heater 1 is 200mm×200mm, the first heater 1 is a serpentine heater, and the serpentine heater includes a serpentine heating part 11, a first linear heating part 12 and a second linear heating part 13, the length of the first linear heating part 12 and the second linear heating part 13 is 200 mm, and the serpentine heating part 11 includes 9 There are 8 straight heating sections and 8 bending heating sections, and the side wall of the crucible is placed as image 3 The two heating units shown are the first heating unit and the second heating unit from bottom to top. The inner diameters of the first heating unit and the second heating unit are both 220mm and the height is 30mm. The first heating unit and the second heating unit The distance between the first heat...

Embodiment 2

[0099] use Figure 4 For the single crystal growth furnace shown, the bottom area of ​​the crucible is 200mm×200mm, and the height is 180mm. figure 2 The shown first heater 1, the area of ​​the effective heating area of ​​the first heater 1 is 200mm * 200mm, the first heater 1 is a plane spiral heater, and the crucible side wall is placed as image 3 The two heating units shown are the first heating unit and the second heating unit from bottom to top. The inner diameters of the first heating unit and the second heating unit are both 220mm and the height is 30mm. The first heating unit and the second heating unit The distance between the first heating unit and the bottom surface of the crucible is 40mm, the distance between the second heating unit and the top surface of the crucible is 40mm, and the upper slots 9 are evenly arranged on the annular heating elements of the first heating unit and the second heating unit. , 9 lower slots.

[0100] The specific process settings a...

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Abstract

The invention relates to the technical field of single crystal preparation, in particular to a preparation method of silicon carbide single crystals, a single crystal growth furnace and a heating device of the single crystal growth furnace. The heating device of the single crystal growth furnace comprises a first heater 1 and a second heater 2; the second heater 2 comprises a plurality of heating units 21 working independently; the first heater 1 is a snakelike heater or a planar spiral heater; and the heating units 21 are annular heaters. According to the heating device provided by the invention, the temperature in the single crystal growth cavity can be accurately controlled, so that the high-quality and large-size SiC single crystal can be obtained when the SiC single crystal is prepared.

Description

technical field [0001] The invention relates to the technical field of single crystal preparation, in particular to a method for preparing a silicon carbide single crystal, a single crystal growth furnace, and a heating device for the single crystal growth furnace. Background technique [0002] As a third-generation semiconductor material, SiC crystal material has excellent physical, chemical and electrical properties such as large band gap, strong breakdown electric field, high saturated electron migration speed, high thermal conductivity and good chemical stability. It is considered to be an ideal material for making high-power, high-frequency electronic devices, and can be widely used in extreme conditions such as high temperature and strong radiation. [0003] At present, the methods of growing SiC include crystal growth and epitaxial growth, among which the PVT (Physical Vapor Transport) method is currently the most mature and the main method for mass production of SiC ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/06C30B23/02C30B29/36
CPCC30B23/066C30B23/02C30B23/002C30B29/36
Inventor 田义良廖青春苗双柱高广进曹桂莲赵新田
Owner 宁波合盛新材料有限公司
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