Two-dimensional graphene prepared by vapor deposition method and preparation method thereof

A vapor deposition method, graphene technology, applied in the field of materials, can solve problems such as many defects, rough surface, poor performance, etc., and achieve the effect of saving cost and energy

Inactive Publication Date: 2021-11-30
SUZHOU UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the cold rolling process in the copper foil manufacturing process will introduce carbon pollution sources during the mechanical treatment of the foil. Even high-purity copper foils have such problems. Copper continues to evaporate creating a rough surface
The surface state of the copper foil substrate greatly affects the growth of graphene. Usually, due to the influence of carbon impurities and flatness in the copper foil substrate, the prepared graphene film has poor uniformity, continuity, and many defects, resulting in poor performance. poor

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] S11 Clean the copper foil, specifically soak the copper foil in HCl with a mass concentration of 18%, deionized water, acetone, and isopropanol, and ultrasonically clean it for 15 minutes; then dry it with nitrogen, and put it into a quartz tube after drying ;

[0026] After S12, use argon to purge the quartz tube 5 times to exhaust the air and most importantly, the oxygen in it, and then anneal the copper foil at 1000°C for 30 minutes under the condition that the flow rate of hydrogen is 110 sccm and the flow rate of argon is 390 sccm , to ensure the removal of natural oxides in the quartz tube and on the surface of the copper foil, and to increase the grain size of the copper to promote a smooth surface of the copper foil.

[0027] After the S13 annealing is completed, quickly cool to the graphene growth temperature of 300°C, adjust the hydrogen flow rate to 20 sccm, turn off the argon gas, and use the argon gas with a flow rate of 5 sccm to pump the benzene liquid wi...

Embodiment 2

[0033] S21 Clean the copper foil, specifically soak the copper foil in HCl with a mass concentration of 18%, deionized water, acetone, and isopropanol, and ultrasonically clean it for 17 minutes; then dry it with nitrogen, and put it into a quartz tube after drying ;

[0034] After S22, use argon to purge the quartz tube 5 times to exhaust the air and most importantly, the oxygen in it, and then anneal the copper foil at 1100°C for 30 minutes under the condition that the flow rate of hydrogen is 110 sccm and the flow rate of argon is 390 sccm , to ensure the removal of natural oxides in the quartz tube and on the surface of the copper foil, and to increase the grain size of the copper to promote a smooth surface of the copper foil.

[0035] After the S23 annealing is completed, it is rapidly cooled to the graphene growth temperature of 250°C, the hydrogen flow rate is adjusted to 20 sccm, the argon gas is turned off, and the benzene liquid with a mass concentration greater tha...

Embodiment 3

[0039] S31 Clean the copper foil, specifically soak the copper foil in HCl with a mass concentration of 18%, deionized water, acetone, and isopropanol, and ultrasonically clean it for 20 minutes; then dry it with nitrogen, and put it into a quartz tube after drying ;

[0040] After S32, use argon gas to purge the quartz tube 6 times to exhaust the air, and most importantly, the oxygen in it, and then anneal the copper foil at 1100°C for 30 minutes under the condition that the flow rate of hydrogen is 110 sccm and the flow rate of argon is 390 sccm , to ensure the removal of natural oxides in the quartz tube and on the surface of the copper foil, and to increase the grain size of the copper to promote a smooth surface of the copper foil.

[0041] After S33 annealing is completed, it is rapidly cooled to the graphene growth temperature of 200°C, the hydrogen flow rate is adjusted to 20 sccm, the argon gas is turned off, and the benzene liquid with a mass concentration greater th...

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Abstract

The invention discloses two-dimensional graphene prepared by a vapor deposition method and a preparation method thereof. The preparation method comprises the following steps of: cleaning a copper foil, then drying the copper foil with nitrogen, and putting the dried copper foil into a quartz tube; blowing the quartz tube with argon to exhaust air, and annealing the copper foil at high temperature in a hydrogen and argon atmosphere; after annealing is completed, rapidly cooling to a graphene growth temperature, adjusting the flow velocity of hydrogen and argon, and pumping benzene liquid into the quartz tube in a bubbling manner for reaction; and after the reaction is completed, cooling to the room temperature, then closing the gas, and finally generating two-dimensional graphene. Single-layer graphene is prepared at low temperature and normal pressure, the cost is saved, the technological process is simplified, and the safety of the technology is improved.

Description

technical field [0001] The invention relates to the field of materials, in particular to a two-dimensional graphene prepared by a vapor deposition method and a preparation method thereof. Background technique [0002] Graphene has been widely studied and applied due to its good physical and chemical properties, such as ultra-high carrier mobility, ultra-high light transmittance, and good mechanical properties. It is used in transparent conductive films, photoelectric detection, Catalysis, biological detection and other fields have shown great use value. [0003] The preparation methods of graphene mainly include mechanical exfoliation method, redox method, chemical vapor deposition method, epitaxial growth method, thermal expansion method, solvent intercalation method and electrochemical method. Due to the treatment of strong oxidizing and reducing agents in the redox method, there are a large number of defects in the product and some surface functional groups remain, which...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186C01B32/194
CPCC01B32/186C01B32/194
Inventor 孙佳惟孙云飞阙妙玲陈丽香刘传洋李涛
Owner SUZHOU UNIV OF SCI & TECH
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