Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of machinable diamond/metal matrix composite material

A technology of mechanical processing and composite materials, applied in metal material coating technology, coating, gaseous chemical plating, etc., can solve problems such as processing difficulty

Active Publication Date: 2022-07-12
CENT SOUTH UNIV
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a method for preparing a machinable diamond / metal matrix composite material. The present invention can not only provide high thermal conductivity materials but also solve the difficulty of post-processing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of machinable diamond/metal matrix composite material
  • A kind of preparation method of machinable diamond/metal matrix composite material
  • A kind of preparation method of machinable diamond/metal matrix composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Preparation of doped diamond particles

[0041] Using single crystal diamond particles with a particle size of 500 μm as the raw material, a polycrystalline diamond transition layer was first deposited on the surface of the diamond particles by chemical deposition, and the mass flow ratio of the atmosphere was CH 4 :H 2 = 2:98, the deposition temperature is 800° C., the growth times are 2 times, and the single deposition time is 10 min to obtain a polycrystalline diamond transition layer with a thickness of 200 nm.

[0042] Then, the doped diamond outer shell layer is grown on the surface of the polycrystalline diamond transition layer by hot wire chemical vapor deposition to obtain doped diamond particles. Deposition process parameters: the distance of the hot wire is 10mm, the thickness of the hot wire is 0.5mm, the growth temperature is 850°C, the deposition pressure is 3KPa, and the thickness of the diamond film is 2μm by controlling the deposition time; during the...

Embodiment 2

[0047] Preparation of doped diamond particles

[0048] Using 400um single crystal diamond particles as the raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. The process is: the mass flow ratio of the incoming atmosphere is CH 4 :H 2 = 2:98, the number of growth is 2 times, and the time of each growth is 20min, and finally a polycrystalline diamond transition layer with a maximum degree of 400nm is obtained.

[0049] Then, a doped diamond outer shell layer is grown on the surface of the polycrystalline diamond transition layer by hot wire chemical vapor deposition to obtain a diamond reinforcement. Deposition process parameters: the distance of the hot wire is 10mm, the thickness of the hot wire is 0.5mm, the growth temperature is 850°C, the deposition pressure is 3KPa, and the thickness of the diamond film is 3μm by controlling the deposition time; during the chemical vapor deposition,...

Embodiment 3

[0054] Preparation of diamond reinforcement

[0055] Using 300um single crystal diamond particles as the raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. The process is: the mass flow ratio of the incoming atmosphere is CH 4 :H 2 = 2:98, the number of growth is 2 times, and the time of each growth is 20min, and finally a polycrystalline diamond transition layer with a maximum degree of 400nm is obtained.

[0056] Then, a doped diamond outer shell layer is grown on the surface of the polycrystalline diamond transition layer by hot wire chemical vapor deposition to obtain a diamond reinforcement. Deposition process parameters: the distance of the hot wire is 10mm, the thickness of the hot wire is 0.5mm, the growth temperature is 850°C, the deposition pressure is 3KPa, and the thickness of the diamond film is 2μm by controlling the deposition time; during the chemical vapor deposition, t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
melting pointaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a machinable diamond / metal matrix composite material. The doped diamond particles are placed in a mold A, a metal ingot is placed in a mold B, and then placed together in a heating device, and the mold is placed in a heating device. There is a channel between A and the mold B, and the machined metal material is placed at the entrance of the channel and / or the machined metal material is made into a template in the form of a finished product, placed in the doped diamond particles, and the doped diamond The particles are divided into finished products, and the atmosphere pressure-assisted infiltration technology is adopted, and high-purity gas is used as the pressure source to act on the surface of the molten liquid metal base to realize high-density composite of diamond and metal base material; the invention can effectively overcome the infiltration process. Capillary force, realizing high-density infiltration molding, the obtained material has high thermal conductivity and adjustable thermal expansion coefficient, and the material is provided with machinable materials, which is convenient for post-processing of the material.

Description

technical field [0001] The invention belongs to the field of composite materials, in particular to a preparation method of a machinable diamond / metal matrix composite material. Background technique [0002] With the rapid development of information technology, the integration of electronic and semiconductor devices continues to increase, making the power density of the device larger and larger, and the calorific value rises rapidly. The temperature rise caused by the heat not being dissipated in time will seriously affect the working efficiency and service life. [0003] In recent years, with the rapid development of diamond preparation technology, the quality and preparation cost of synthetic diamond have been greatly improved. Metal matrix composites with diamond as thermal conductive filler show more competitive application prospects in the development of high-performance thermal management materials due to their excellent thermal conductivity, adjustable thermal expansi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C22C26/00B22D27/13C22C1/10C22C5/06C22C9/00C22C14/00C22C18/00C22C21/00C22C23/00C23C16/27
CPCC22C26/00C22C1/1036C22C1/101C22C1/1005C23C16/27C23C16/271C23C16/278B22D27/13C22C9/00C22C21/00C22C5/06C22C14/00C22C18/00C22C23/00C22C1/1047
Inventor 魏秋平周科朝马莉黄开塘李俊
Owner CENT SOUTH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com