Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of machinable diamond/metal matrix composite material

A technology of mechanical processing and composite materials, applied in metal material coating technology, coating, gaseous chemical plating, etc., can solve problems such as processing difficulty

Active Publication Date: 2021-12-03
CENT SOUTH UNIV
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a method for preparing a machinable diamond / metal matrix composite material. The present invention can not only provide high thermal conductivity materials but also solve the difficulty of post-processing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of machinable diamond/metal matrix composite material
  • Preparation method of machinable diamond/metal matrix composite material
  • Preparation method of machinable diamond/metal matrix composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Preparation of Doped Diamond Particles

[0041] Using single crystal diamond particles with a particle size of 500 μm as the raw material, a polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition, and the mass flow ratio of the atmosphere is CH 4 :H 2 =2:98, the deposition temperature is 800° C., the growth times are 2 times, and the single deposition time is 10 minutes to obtain a polycrystalline diamond transition layer with a thickness of 200 nm.

[0042] Then use hot wire chemical vapor deposition to grow a doped diamond shell layer on the surface of the polycrystalline diamond transition layer to obtain doped diamond particles. Deposition process parameters: hot wire distance 10 mm, hot wire thickness 0.5 mm, growth temperature 850 ° C, deposition pressure 3 KPa, diamond film thickness 2 μm obtained by controlling deposition time; during the chemical vapor deposition, the mass flow ratio of the pa...

Embodiment 2

[0047] Preparation of Doped Diamond Particles

[0048] Using 400um single crystal diamond particles as the raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. The process is as follows: the mass flow rate of the atmosphere is CH 4 :H 2 =2:98, the number of growths is 2 times, each growth time is 20min, and finally a polycrystalline diamond transition layer with a thickness of 400nm is obtained.

[0049] Then use hot wire chemical vapor deposition to grow a doped diamond shell layer on the surface of the polycrystalline diamond transition layer to obtain a diamond reinforcement. Deposition process parameters: hot wire distance 10mm, hot wire thickness 0.5mm, growth temperature 850°C, deposition pressure 3KPa, diamond film thickness 3μm obtained by controlling the deposition time; during the chemical vapor deposition, the growth deposition is divided into three stages, the first During de...

Embodiment 3

[0054] Preparation of diamond reinforcement

[0055] Using 300um single crystal diamond particles as the raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. The process is as follows: the mass flow rate of the atmosphere is CH 4 :H 2 =2:98, the number of growths is 2 times, each growth time is 20min, and finally a polycrystalline diamond transition layer with a thickness of 400nm is obtained.

[0056] Then use hot wire chemical vapor deposition to grow a doped diamond shell layer on the surface of the polycrystalline diamond transition layer to obtain a diamond reinforcement. Deposition process parameters: hot wire distance 10mm, hot wire thickness 0.5mm, growth temperature 850°C, deposition pressure 3KPa, diamond film thickness 2μm obtained by controlling the deposition time; during the chemical vapor deposition, the mass flow ratio of the passing gas is CH 4 :H 2 :B 2 h 6 =2:97:1, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a machinable diamond / metal matrix composite material. The method comprises the following steps: placing doped diamond particles in a mold A, placing a metal ingot in a mold B, then placing the mold A and the mold B in a heating device together, enabling a channel to be formed between the mold A and the mold B, placing a machining metal material at an inlet of the channel and / or manufacturing the machining metal material into a mold plate according to the form of a finished product, placing in the doped diamond particles, dividing the doped diamond particles into the form of the finished product, adopting an atmosphere pressure-assisted melt infiltration technology, taking high-purity gas as a pressure source, and acting on the surface of a molten liquid metal matrix to realize high-density compounding of the diamond and the metal matrix material. According to the preparation method, capillary force in infiltration can be effectively overcome, high-compactness pressure infiltration forming is achieved, the prepared material is higher in heat conductivity and adjustable in thermal expansion coefficient, the material is provided with the machining material, and later processing treatment of the material is facilitated.

Description

technical field [0001] The invention belongs to the field of composite materials, and in particular relates to a preparation method of a machinable diamond / metal matrix composite material. Background technique [0002] With the rapid development of information technology, the integration of electronic and semiconductor devices continues to increase, which makes the power density of the device more and more large, and the calorific value rises rapidly. The temperature rise caused by the heat not dissipating in time will seriously affect the working efficiency and service life. [0003] In recent years, with the rapid development of diamond preparation technology, the quality and preparation cost of synthetic diamond have been greatly improved. Metal matrix composites with diamond as thermal filler show more competitive application prospects in the development of high-performance thermal management materials due to their excellent thermal conductivity, adjustable thermal expa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C22C26/00B22D27/13C22C1/10C22C5/06C22C9/00C22C14/00C22C18/00C22C21/00C22C23/00C23C16/27
CPCC22C26/00C22C1/1036C22C1/101C22C1/1005C23C16/27C23C16/271C23C16/278B22D27/13C22C9/00C22C21/00C22C5/06C22C14/00C22C18/00C22C23/00C22C1/1047
Inventor 魏秋平周科朝马莉黄开塘李俊
Owner CENT SOUTH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com