Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Low Voltage High Linearity Cascode Amplifier

A common source amplifier, common gate amplifier technology, used in amplifiers, amplifiers with semiconductor devices/discharge tubes, improving amplifiers to reduce nonlinear distortion, etc. Guarantee the circuit amplification state and other issues, to achieve the effect of enhancing the maximum power output capability, avoiding performance loss, and ensuring normal working conditions

Active Publication Date: 2022-02-11
成都明夷电子科技有限公司
View PDF14 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the supply voltage drops to a certain level, M 1a and M 2a The threshold voltages of the two transistors are superimposed on each other, and it cannot be guaranteed that the two transistors work in the saturation region at the same time, that is, it cannot be guaranteed that the circuit can be in a good amplification state

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Low Voltage High Linearity Cascode Amplifier
  • A Low Voltage High Linearity Cascode Amplifier
  • A Low Voltage High Linearity Cascode Amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] This embodiment proposes a low-voltage high-linearity cascode amplifier, including a Cascode amplifier and a voltage boosting unit;

[0077] The Cascode amplifier comprises a cascaded common-source amplifier and a common-gate amplifier; the NMOS transistor M used as a common-source transistor is arranged in the described common-source amplifier 1b , the NMOS transistor M used as a common-gate transistor is arranged in the common-gate amplifier 2b ; The NMOS transistor M 2b Drain with NMOS transistor M 1b source connection; the NMOS transistor M 2b The source of is connected to the voltage boosting unit.

[0078] Working principle: through the voltage boost unit, the NMOS transistor M in the Cascode amplifier unit is improved 1b The potential difference between the drain and the source of the NMOS transistor M2b enhances the output voltage swing and maximum power output capability of the Cascode amplifier unit, thereby effectively improving the linearity of the casco...

Embodiment 2

[0080] On the basis of the above-mentioned embodiment 1, in order to better realize the present invention, this embodiment further includes a DC bias unit connected to the gate of the NMOS transistor M2b.

[0081] Working principle: The DC bias unit provides a stable DC operating point for the Cascode amplifier unit in the full temperature range (-55°C to 125°C), avoiding the performance loss caused by the drift of the DC operating point.

[0082] Other parts of this embodiment are the same as those of Embodiment 1 above, so details are not repeated here.

Embodiment 3

[0084] On the basis of any one of the above-mentioned embodiments 1-2, in order to better realize the present invention, this embodiment further includes a DC separation unit, and the DC separation unit is arranged between the Cascode amplifier and the voltage boosting unit During this period, the source of the NMOS transistor M2b in the Cascode amplifier is first connected to the DC separation unit, and then connected to the voltage boosting unit through the DC separation unit.

[0085] Working principle: The DC separation unit ensures that the voltage boost unit does not affect the electrical characteristics of the Cascode amplifier unit, and ensures that the low-voltage and high-linearity cascode amplifier is in normal working condition.

[0086] Other parts of this embodiment are the same as those of any one of Embodiments 1-2 above, so details are not repeated here.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a low-voltage and high-linear cascode amplifier, which includes a Cascode amplifier, a DC bias unit, a DC separation unit and a voltage boost unit. The DC bias unit provides a stable DC operating point for the Cascode amplifier unit in the full temperature (-55°C to 125°C) range, avoiding the performance loss caused by the drift of the DC operating point. The DC separation unit ensures that the voltage boost unit does not affect the electrical characteristics of the Cascode amplifier unit, and ensures that the low-voltage and high-linearity cascode amplifier is in a normal working state. Through the voltage boost unit, the NMOS transistor M in the Cascode amplifier unit is improved 1b Drain with NMOS transistor M 2b The potential difference between the sources enhances the output voltage swing and maximum power output capability of the Cascode amplifier unit, thereby effectively improving the linearity of the cascode amplifier.

Description

technical field [0001] The invention belongs to semiconductor materials used in the fields of mobile communication, microwave communication and radar, and in particular relates to a low-voltage and high-linear cascode amplifier. Background technique [0002] With the advancement of semiconductor technology, the system integration level continues to increase. Since the power consumption of integrated circuits is in a quadratic relationship with the power supply voltage, in order to reduce the overall power consumption of the system, the power supply voltage of the system is continuously reduced. [0003] At the same time, for low-voltage systems that need to be powered by batteries or ambient energy, such as implantable medical devices, wireless sensor networks, and wireless telemetry networks, it is necessary to ensure that the wireless system can work normally under low power supply voltage. [0004] However, for the radio frequency front end in the wireless system, the rad...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/217H03F3/193H03F1/32H03F1/30
CPCH03F3/211H03F3/2171H03F3/193H03F1/3205H03F1/301H03F2200/72H03F2200/75H03F2200/522
Inventor 姚静石刘成鹏毛毅
Owner 成都明夷电子科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com