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Composite material and preparation method thereof and quantum dot light-emitting diode

A technology of quantum dot luminescence and composite materials, applied in the field of luminescence display, to achieve the effect of improving luminescence performance, improving carrier transport performance, and simple operation

Pending Publication Date: 2021-12-07
武汉国创科光电装备有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There is no relevant report on the use of graphyne as the light-emitting layer material of quantum dot light-emitting diodes

Method used

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  • Composite material and preparation method thereof and quantum dot light-emitting diode
  • Composite material and preparation method thereof and quantum dot light-emitting diode
  • Composite material and preparation method thereof and quantum dot light-emitting diode

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preparation example Construction

[0040] combine figure 1 , the second aspect of the embodiment of the present application provides a preparation method of a composite material, comprising the following steps:

[0041] S01. Under an inert atmosphere, add organic ligands after preheating the quantum dot colloid solution, and carry out the first heating reaction to obtain a quantum dot solution with organic ligands bound on the surface; wherein, the structure of the organic ligand is as shown in formula 1 below shown, in Equation 1, R 1 R 2 , R 3 , R 4 , R 5 , R 6 each independently selected from one of H, methyl and ethyl;

[0042]

[0043] S02. adding graphdiyne into the quantum dot solution, and performing a second heating reaction to prepare a composite material comprising quantum dots and graphdiyne combined with quantum dots.

[0044] In the preparation method of the composite material provided in the embodiment of the present application, the quantum dot colloid solution is preheated and then or...

Embodiment 1

[0088] A preparation method of composite material, comprising the following steps:

[0089] An appropriate amount of CdS / ZnS was added to 20 ml of ODE to form a quantum dot colloid solution with a total concentration of 20 mg / mL. Subsequently, the temperature was raised to 200° C. in an argon atmosphere, and then benzyl mercaptan was injected according to the volume ratio of quantum dots to benzyl mercaptan 50:1, and the reaction was incubated for 30 min to form a quantum dot solution.

[0090] According to the molar ratio of quantum dots to graphdiyne of 1:0.1, an appropriate amount of graphdiyne was added to the quantum dot solution, and the solution was continued to stir at 200 °C for 30 min. After the reaction, after the reaction solution was lowered to room temperature, it was precipitated and washed with ethyl acetate, ethanol, acetone and ethanol in steps, and then re-dispersed in n-hexane to prepare a graphyne-CdS / ZnS quantum dot composite material.

Embodiment 2

[0092] A preparation method of composite material, comprising the following steps:

[0093] Put an appropriate amount of Cd 1-x Zn x S was added to 20 ml of 1-hexadecene to form a quantum dot colloid solution with a total concentration of 30 mg / mL. Subsequently, the temperature was raised to 200° C. in an argon atmosphere, and then benzyl mercaptan was injected according to the volume ratio of quantum dots to benzyl mercaptan 40:1, and the reaction was kept for 30 min to form a quantum dot solution.

[0094] According to the molar ratio of quantum dots to graphdiyne of 1:0.2, an appropriate amount of graphdiyne was added to the quantum dot solution, and the solution was continued to stir at 200 °C for 1 h. After the reaction, after the reaction solution was lowered to room temperature, it was precipitated and washed with ethyl acetate, ethanol, acetone and ethanol step by step, and then redispersed in n-octane to prepare graphyne-Cd 1-x Zn x S quantum dot composites.

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Abstract

The invention relates to the technical field of light-emitting display, and provides a composite material and a preparation method thereof and a quantum dot light-emitting diode. The composite material comprises quantum dots and graphdiyne combined with the quantum dots. By compounding the quantum dots and the graphdiyne, a hybridization effect between a pz orbital of the graphdiyne and an outer orbital of metal ions on the quantum dots is realized, so that interaction can be generated between the graphdiyne and the quantum dots, the carrier transport performance of the quantum dots is improved, and effective compounding of electrons and holes in the quantum dots is promoted.

Description

technical field [0001] The invention belongs to the technical field of light-emitting display, and particularly relates to a composite material and a preparation method thereof, and a quantum dot light-emitting diode. Background technique [0002] As the current mainstream display technology, LCD display needs to rely on a backlight to emit light, so the power consumption remains high. In addition, the LCD display still has the problems of complex structure and high cost, which limits its development. Quantum dots have excellent optical properties, including continuous tunability of full-spectrum luminescence peaks, high color purity, and good stability, and are excellent luminescent and optoelectronic materials. Studies have found that when quantum dots (Semiconductor quantum dots, QDs) are used to replace phosphors in traditional backlight modules, the color gamut of the display can be greatly improved. Specifically, after using quantum dots to replace the phosphors in t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/56H01L51/50
CPCC09K11/025C09K11/565H10K50/115
Inventor 何斯纳吴龙佳吴劲衡
Owner 武汉国创科光电装备有限公司
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